相关论文: Electrical transport in C-doped GaAs nanowires: su…

The magnetic and transport behaviors of cerium substituted iron oxy-arsenide superconductor with x = 0.1 to 0.4 fluoride (F) doping have been investigated in this report. Temperature dependent susceptibility and resistivity measurements…

We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance…

We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…

Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…

We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…

In this paper, we explore the effect of a finite surface charge mobility on the interfacial transport: conductance, streaming currents, electro- and diffusio-osmotic flows. We first show that the surface charge mobility modifies the…

Surface properties of Co-doped BaFe2As2 epitaxial superconducting thin films were inspected by X-ray photoelectron spectroscopy, scanning spreading resistance microscopy (SSRM), and point contact spectroscopy (PCS). It has been shown that…

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…

Surface conductance measurements on p-type doped germanium show a small but systematic change to the surface conductivity at different length scales. This effect is independent of the structure of the surface states. We interpret this…

We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness,…

Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it…

The effect of Fe doping in the Mn site on the magnetic, transport and structural properties of polycrystalline La1/2Ca1/2MnO3 was studied. Doping with low Fe concentration (< 10%) strongly affects electrical transport and magnetization.…

Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the…

Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were…

Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T…

We report an observation of a topologically protected transport of surface carriers in a quasi-ballistic Cd3As2 nanowire.The nanowire is thin enough for the spin-textured surface carriers to form 1D subbands, demonstrating conductance…

Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…

We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity…

Polarization induced degenerate $n$-type doping with electron concentrations up to $\sim$10$^{20}$\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$N layers ($x$: 0\%$\rightarrow$37\%) grown on unintentionally doped and on $n$-doped…

We use time-of-flight (ToF) inelastic neutron scattering (INS) spectroscopy to investigate the doping dependence of magnetic excitations across the phase diagram of NaFe$_{1-x}$Co$_x$As with $x=0, 0.0175, 0.0215, 0.05,$ and $0.11$. The…