相关论文: Surface-Roughness-Limited Mean Free Path in Si Nan…

In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…

The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional…

A microscopic model of surface roughness (SR) scattering in inversion layers of bulk-MOSFETs based on Ando's linear model is proposed. Taking into account the stochastic nature of roughness position induced by discontinuity of the spatial…

In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain is discretized with a three-dimensional (3D) finite element…

We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a…

Rough surface effect on the Meissner diamagnetic current in the normal layer of proximity contact N-S bi-layer is investigated in the clean limit. The diamagnetic current and the screening length are calculated by use of quasi-classical…

The band structures of single-layer MoS$_2$ and WS$_2$ present a coupling between spin and valley degrees of freedom that suppresses spin-flip scattering and spin dephasing. Here we show that out-of-plane deformations, such as corrugations…

The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of…

The understanding of the mean free path (MFP) distribution of the energy carriers in materials (e.g. electrons, phonons, magnons, etc.) is a key physical insight into their transport properties. In this context, MFP spectroscopy has become…

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…

We extend quantum models of nanowire surface scattering to incorporate bulk resistivity and extract an expression for the increased resistivity due to surface roughness. To learn how to improve conductivity, we calculate conductivity…

Noble-metal-free surface-enhanced Raman scattering (SERS) substrates have attracted great attention for their abundant sources, good signal uniformity, superior biocompatibility, and high chemical stability. However, the lack of…

We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by…

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

The boundaries of waveguides and nanowires have drastic influence on their coherent scattering properties. Designing the boundary profile is thus a promising approach for transmission and band-gap engineering with many applications. By…

In the present work we show that the correct determination of surface morphology using Scanning Force Microscopy (SFM) imaging and Power Spectral Density (PSD) analysis of the surface roughness is an extremely demanding task that is easily…

In contrast to the in-plane transport electron mean-free path in graphene, the transverse mean-free path has received little attention and is often assumed to follow the 'universal' mean-free path (MFP) curve broadly adopted in surface and…

Impurity-doping is an exciting new technology in the field of SRF, producing cavities with record-high quality factor $Q_0$ and BCS surface resistance that decreases with increasing RF field. Recent theoretical work has offered a promising…

We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are…

We study a new mechanism of wave/electron scattering in multi-mode surface-corrugated waveguides/wires. This mechanism is due to specific square-gradient terms in an effective Hamiltonian describing the surface scattering, that were…