相关论文: Self-Formation of Sub-10-nm Nanogaps by Silicidati…

We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few…

Nanostructures have become an attractive subject due to many applications, particularly the photonic bandgap effect observed in photonic crystals. Nevertheless, the fabrication of such structures remains a challenge because of accurate…

Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in…

Airbridges are essential for creating high-performance, low-parasitic interconnects in integrated circuits and quantum devices. Conventional multi-step fabrication methods hinder miniaturization and introduce process-related defects. We…

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and…

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical…

We present a new process for fabricating vertical NbN-MgO-NbN Josephson junctions using self-aligned silicon nitride spacers. It allows for a wide range of junction areas from 0.02 um^2 to several 100 um^2. At the same time, it is suited…

Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the…

We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally…

Iron silicon oxide nanowire has been synthesized by putting single crystalline Si(100) wafer into ammonium iron sulfate, hydrogen peroxide, and triethylamine solution heated to from 70 to 100 degree in the air. The prepared iron silicon…

We report the electrical detection of captured gases through measurement of the tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas sensing nanogap device consists of a pair of vertically stacked…

Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and below 200 nm in width were deposited on an insulating…

The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…

A metallic ring based, diode-integrated, low-profile, power-dependent, reflective metasurface working from 3 GHz to 3.6 GHz is proposed in this letter. Unlike the previous study which shifts a band up and down to change the impedance of the…

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…

Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating…

By placing a quantum emitter in the mouths of nanogaps consisting of two metal nanoparticles nearly into contact, significant increases in emission rate are obtained. This mechanism is central in the design of modern plasmonic nanoantennas.…

Colloidal lead sulfide is a versatile material with great opportunities to tune the bandgap by electronic confinement and to adapt the optical and electrical properties to the target application. We present a new and simple synthetic route…

Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…

We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are…