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The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…

Graphene has been studied in detail due to its mechanical, electrical, and thermal properties. It is well documented that the introduction of dopants or defects in the lattice can be used to tune material properties for a specific…

材料科学 · 物理学 2025-09-11 Benedict Saunders , Lukas Hörmann , Reinhard J. Maurer

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

介观与纳米尺度物理 · 物理学 2020-09-17 Giovanni Spinelli , Patrizia Lamberti , Vincenzo Tucci , Francisco Pasadas , David Jiménez

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $\theta$. We…

强关联电子 · 物理学 2020-06-30 Xiao Li , Fengcheng Wu , S. Das Sarma

Flexoelectricity phenomenon is the response of electric polarization to an applied strain gradient and is developed as a consequence of crystal symmetry in all materials. In this study, we show that the presence of strain gradient in…

计算物理 · 物理学 2017-03-03 S. I. Kundalwal , S. A. Meguid , G. J. Weng

Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an…

介观与纳米尺度物理 · 物理学 2019-03-27 I. G. Serrano , J. Panda , Fernand Denoel , Örjan Vallin , Dibya Phuyal , Olof Karis , M. Venkata Kamalakar

It is widely assumed that the dominant source of scattering in graphene is charged impurities in a substrate. We have tested this conjecture by studying graphene placed on various substrates and in high-k media. Unexpectedly, we have found…

Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…

材料科学 · 物理学 2014-10-21 Shuang Tang , Mildred S. Dresselhaus

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile…

介观与纳米尺度物理 · 物理学 2022-06-06 Paul Froeter , Parsian Moseni , Apratim Khandelwal , Xiuling Li

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary…

材料科学 · 物理学 2014-08-26 A. Gao , C. J. Lee , F. Bijkerk

Graphene revealed a number of unique properties beneficial for electronics, including exceptionally high electron mobility and widely tunable Fermi level. However, graphene does not have an electron energy band gap, which presents a serious…

材料科学 · 物理学 2015-10-16 Alexander A. Balandin

We propose the concept, synthesis, analysis, and design of graphene-based plasmonic tunable low-pass filters operating in the THz band. The proposed structure is composed of a graphene strip transferred onto a dielectric and a set of…

介观与纳米尺度物理 · 物理学 2014-10-28 D. Correas Serrano , J. S. Gomez Diaz , J. Perruisseau-Carrier , A. Alvarez Melcon

We present a study of transport in graphene devices on polar insulating substrates using a tight-binding model. The mobility is computed using a multiband Boltzmann treatment. We provide the scaling of the surface polar phonon contribution…

介观与纳米尺度物理 · 物理学 2009-10-27 Vasili Perebeinos , Phaedon Avouris

Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…

计算物理 · 物理学 2015-04-08 Xiang-Guo Li , Iek-Heng Chu , X. -G. Zhang , Hai-Ping Cheng

We show that a coherent picture of the dc conductivity of monolayer and bilayer graphene at finite electronic densities emerges upon considering that strong short-range potentials are the main source of scattering in these two systems. The…

介观与纳米尺度物理 · 物理学 2011-04-08 A. Ferreira , J. Viana Gomes , Johan Nilsson , Eduardo R. Mucciolo , N. M. R. Peres , A. H. Castro Neto

A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graphene in dimethylformamide (DMF). DMF is then exchanged by…

材料科学 · 物理学 2012-05-10 Jiantong Li , Fei Ye , Sam Vaziri , Mamoun Muhammed , Max C. Lemme , Mikael Östling

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

材料科学 · 物理学 2013-04-26 Kosuke Nagashio , Akira Toriumi

Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density…

其他凝聚态物理 · 物理学 2009-11-13 J. H. Chen , C. Jang , M. S. Fuhrer , E. D. Williams , M. Ishigami

We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simlutate the electronic band structure and show the effects of impurity doping (0-3.91\%) in…

Successful ways of fully exploiting the excellent structural and multifunctional performance of graphene and related materials are of great scientific and technological interest. New opportunities are provided by the fabrication of a novel…