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Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium…

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their…

介观与纳米尺度物理 · 物理学 2015-05-28 Sarah Goler , Vincenzo Piazza , Stefano Roddaro , Vittorio Pellegrini , Fabio Beltram , Pasqualantonio Pingue

We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account…

材料科学 · 物理学 2022-05-24 S. E. Krasavin , V. A. Osipov

Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several…

The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…

介观与纳米尺度物理 · 物理学 2018-10-10 N Firsova , S Ktitorov

We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing…

介观与纳米尺度物理 · 物理学 2015-06-12 Md. Zahid Hossain , Sergey Rumyantsev , Michael S. Shur , Alexander A. Balandin

Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large…

材料科学 · 物理学 2013-09-03 Nils Blanc , Fabien Jean , Arkady V. Krasheninnikov , Gilles Renaud , Johann Coraux

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…

介观与纳米尺度物理 · 物理学 2021-03-03 Cenk Yanik , Vahid Sazgari , Abdulkadir Canatar , Yaser Vaheb , Ismet I. Kaya

Graphene, being an ultrathin, durable, flexible, transparent material with superior conductivity and unusual optical properties, promises many novel applications in electronics, photonics and optoelectronics. For applications in…

Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…

介观与纳米尺度物理 · 物理学 2017-01-30 Dominik Metten , Guillaume Froehlicher , Stéphane Berciaud

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a…

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa.…

介观与纳米尺度物理 · 物理学 2013-01-30 Amelia Barreiro , Felix Boerrnert , Mark H. Ruemmeli , Bernd Buechner , Lieven M. K. Vandersypen

Point Projection Microscopy (PPM) is used to image suspended graphene using low-energy electrons (100-200eV). Because of the low energies used, the graphene is neither damaged or contaminated by the electron beam. The transparency of…

介观与纳米尺度物理 · 物理学 2015-03-18 J. Y. Mutus , L. Livadaru , J. T. Robinson , R. Urban , M. H. Salomons , M. Cloutier , P. E. Sheehan , R. A. Wolkow

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of…

Graphene oxide (GO) raised substantial interest in the last two decades thanks to its unique properties beyond those of pristine graphene, including electronic energy band-gap, hydrophilic behavior and numerous anchoring sites required for…

应用物理 · 物理学 2021-04-07 O. Seri-Livni , C. Saguy , F. Horani , E. Lifshitz , D. Cheskis

A theoretical study is presented on the scattering of graphene surface plasmons by defects in the graphene sheet they propagate in. These defects can be either natural (as domain boundaries, ripples and cracks, among others) or induced by…

介观与纳米尺度物理 · 物理学 2013-05-31 Juan L. Garcia-Pomar , Alexey Yu. Nikitin , Luis Martin-Moreno

Since the discovery of graphene, its excellent physical properties has greatly improved the performance of many optoelectronic devices and brought important technological revolution to optical research and application. Here, we introduce…

光学 · 物理学 2021-09-07 Xianyou Wang , Yunqi Yuan , Xi Xie , Yuquan zhang , Changjun Min , Xiaocong Yuan

Graphene is expected to be rather insensitive to ionizing particle radiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion…

材料科学 · 物理学 2013-10-24 J. Hopster , R. Kozubek , B. Ban-d'Etat , S. Guillous , H. Lebius , M. Schleberger
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