相关论文: Diffusion of degenerate minority carriers in a p-t…

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band…

We studied the diffusion coefficient of hot electrons of GaN crystals in moderate electric (1...10 kV/cm) and magnetic (1...4 T) fields. Two configurations, parallel and crossed fields, are analysed. The study was carried out for…

The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region…

Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very…

We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum…

We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion…

The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a…

We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states…

The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodology…

We report a transport study of nonequilibrium quasiparticles in a high-Tc cuprate superconductor using the transient grating technique. Low-intensity laser excitation (at photon energy 1.5 eV) was used to introduce a spatially periodic…

We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode we can invert the sign of the photocurrent showing that the…

The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy and ab-initio molecular…

High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Robust signatures of the low-doped electronic state include a Hall carrier density that initially tracks the number of doped holes and the…

We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K.…

In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…

Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned…

We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical…

Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion within a monolayer WSe$_2$ stacked on top of graphene. We further demonstrate that the diffusion dynamics can be optically tuned on…

Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and…

The ambipolar carrier diffusion in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a point-like spatial profile are excited by a tightly focused pump laser pulse. The…