GaMnAs中电子的快速扩散
材料科学
2013-06-10 v2
摘要
我们报道了在居里温度以上和以下，对含有6% Mn的稀磁半导体(Ga,Mn)As的超快瞬态光栅测量。在80 K（15 K）时，我们观察到导带中的光激发电子寿命为8 ps（5 ps），扩散速度约为70 cm2/s（60 cm2/s）。如此快速的扩散要求电子迁移率超过7,700 cm2/Vs，或者导带有效质量小于GaAs值的一半。我们的数据表明，(Ga,Mn)As导带的散射率和有效质量与GaAs相比均无显著差异。
引用
@article{arxiv.1303.0258,
title = {Rapid diffusion of electrons in GaMnAs},
author = {C. P. Weber and Eric A. Kittlaus and Kassandra B. Mattia and Christopher J. Waight and J. Hagmann and X. Liu and M. Dobrowolska and J. K. Furdyna},
journal= {arXiv preprint arXiv:1303.0258},
year = {2013}
}
备注
5 pages, 3 figures. Differs from the previous version in incorporating additional data and changes made during the review process. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either version