相关论文: Visualizing Atomic-Scale Negative Differential Res…
We study the tunneling of Dirac fermions in graphene through a double barrier potential allowing the carriers to have an effective mass inside the barrier as generated by a lattice miss-match with the boron nitride substrate. The…
Negative magnetoresistance (NMR) is a marked feature of Dirac semimetals, and may be caused by multiple mechanisms, such as the chiral anomaly, the Zeeman energy, the quantum interference effect, and the orbital moment. Recently, an…
Formation of moir\'{e} superlattices is common in Van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. We discuss…
Massless Dirac fermions in graphene provide unprecedented opportunities to realize the Klein paradox, which is one of the most exotic and striking properties of relativistic particles. In the seminal theoretical work [Katsnelson et al.,…
A novel two-dimensional carbon allotrope, rectangular graphyne (R-graphyne) with tetra-rings and acetylenic linkages, is proposed by first-principles calculations. Although the bulk R-graphyne exhibits metallic property, the nanoribbons of…
Atomic modulations of two-dimensional materials using scanning tunneling microscope (STM) tip-induced forces modifies their mechanical and electrical properties. In situ topographic and spectroscopic probing through electrical tunneling has…
Bilayer graphene can exhibit deformations such that the two graphene sheets are locally detached from each other resulting in a structure consisting of domains with different inter-layer coupling. Here we investigate how the presence of…
Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon…
The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and…
On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap…
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…
Whereas massless Dirac fermions in monolayer graphene exhibit Klein tunneling when passing through a potential barrier upon normal incidence, such a barrier totally reflects massive Dirac fermions in bilayer graphene due to difference in…
Electron interactions in undoped bilayer graphene lead to instability of the gapless state, `which-layer' symmetry breaking, and energy gap opening at the Dirac point. In contrast to single layer graphene, the bilayer system exhibits…
We theoretically study the nonlinear optical response of ABC trilayer graphene with inversion symmetry broken by the application of a displacement field perpendicular to the trilayer. We show that rhombohedral trilayer graphene exhibits a…
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a…
Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and…
Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the…
Materials and devices used in space and advanced energy systems are continuously exposed to high-energy photons and particles, leading to gradual changes in their structural and electronic properties. Gamma-ray exposure is particularly…
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in…