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We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…

介观与纳米尺度物理 · 物理学 2026-01-08 Ayoub Bahlaoui , Youness Zahidi , Ahmed Naddami

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

材料科学 · 物理学 2009-09-30 Pei Zhao , Jyotsna Chauhan , Jing Guo

In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…

介观与纳米尺度物理 · 物理学 2024-10-10 Takuya Iwasaki , Yoshifumi Morita , Kenji Watanabe , Takashi Taniguchi

We employ classical molecular dynamics to study the nonlinear thermal transport in graphene nanoribbons (GNRs). For GNRs under large temperature biases beyond linear response regime, we have observed the onset of negative differential…

介观与纳米尺度物理 · 物理学 2016-11-25 Jiuning Hu , Yan Wang , Ajit Vallabhaneni , Xiulin Ruan , Yong P. Chen

When light is incident on a medium with spatially disordered index of refraction, interference effects lead to near-perfect reflection when the number of dielectric interfaces is large, so that the medium becomes a "transparent mirror." We…

介观与纳米尺度物理 · 物理学 2020-12-29 Sandeep Joy , Saad Khalid , Brian Skinner

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

Recent successes in manufacturing of atomically thin graphite samples (graphene) have stimulated intense experimental and theoretical activity. The key feature of graphene is the massless Dirac type of low-energy electron excitations. This…

介观与纳米尺度物理 · 物理学 2008-05-23 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction(GS/h-BN) and 11-armchair graphene nanoribbon heterojunction(11-AGNR/h-BN), which were carried out using the density functional…

介观与纳米尺度物理 · 物理学 2018-07-04 Taiga Wakai , Shoichi Sakamoto , Mitsuyoshi Tomiya

The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual…

介观与纳米尺度物理 · 物理学 2013-04-24 Atikur Rahman , Janice Wynn Guikema , Nina Markovic

This article provides a pedagogical review on Klein tunneling in graphene, i.e. the peculiar tunneling properties of two-dimensional massless Dirac electrons. We consider two simple situations in detail: a massless Dirac electron incident…

介观与纳米尺度物理 · 物理学 2011-11-03 P. E. Allain , J. N. Fuchs

A ballistic strip of graphene (width W>> length L) connecting two normal metal contacts is known to have a minimum conductivity of 4e^{2}/pi h at the Dirac point of charge neutrality. We calculate what happens if one of the two contacts…

介观与纳米尺度物理 · 物理学 2013-07-09 A. R. Akhmerov , C. W. J. Beenakker

High-mobility graphene hosting massless charge carriers with linear dispersion provides a promising platform for electron optics phenomena. Inspired by the physics of dielectric optical micro-cavities where the photon emission…

介观与纳米尺度物理 · 物理学 2022-12-15 Jule-Katharina Schrepfer , Szu-Chao Chen , Ming-Hao Liu , Klaus Richter , Martina Hentschel

The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…

介观与纳米尺度物理 · 物理学 2008-08-27 Pierre Darancet , Valerio Olevano , Didier Mayou

Defects in hexagonal boron nitride (h-BN) layer can facilitate tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure…

介观与纳米尺度物理 · 物理学 2018-08-28 Ying Liu , Zhenbing Tan , Manohar Kumar , T. S. Abhilash , Guan-jun Liu , Pertti Hakonen

Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D…

材料科学 · 物理学 2025-05-09 Zhi Yan , Jianhua Xiao , Xujin Zhang , Cheng Fang , Xiaohong Xu

The electronic property of NiFe$_2$O$_4$ nanowire device is investigated through nonequilibrium Green's functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe$_2$O$_4$ nanowire are…

介观与纳米尺度物理 · 物理学 2017-07-03 V. Nagarajan , R. Chandiramouli

A graphene sheet partially covered with a bulk superconductor serves as a normal conductor--superconductor (NS) junction, in which electron transport is mainly governed by Andreev reflection (AR). As excess carriers induced over the covered…

介观与纳米尺度物理 · 物理学 2017-06-28 Yositake Takane , Katsuhide Yarimizu , Akinobu Kanda

We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…

介观与纳米尺度物理 · 物理学 2019-02-18 J. J . P. Thompson , D. J. Leech , M. Mucha-Kruczyński

Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the…

材料科学 · 物理学 2017-09-01 Sam Shallcross , Sangeeta Sharma , Heiko B. Weber

Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…

介观与纳米尺度物理 · 物理学 2024-11-12 Nitin Kumar , Jong E. Han , Karsten Beckmann , Nathaniel Cady , G. Sambandamurthy