相关论文: Magneto-resistance up to 60 Tesla in Topological I…

We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at…

The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new…

Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However,…

Magnetic proximity effect of a topological insulator in contact with a ferromagnet is reported in thin film bilayers of 15 nm thick $BiSbTe_3$ on either 15 or 40 nm thick $SrRuO_3$ on (100) $SrTiO_3$ wafers. Magneto transport results of the…

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous…

We report synthesis, structural details and electrical transport properties of topological insulator Bi2Te3. The single crystalline specimens of Bi2Te3 are obtained from high temperature (950C) melt and slow cooling (2C/hour). The resultant…

We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…

Topological insulators are new kind of Dirac materials that possess bulk insulating and surface conducting behavior. They are basically known for their unique electronic properties at the surface. Here we present the magneto-transport…

Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…

We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular…

We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…

This paper considers certain materials, including topological insulators, where spin rotation symmetry is broken much more strongly than time reversal symmetry. When these materials are in the diffusive regime, i.e. when they have disorder…

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS…

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

We report electrical (angular magneto-resistance, and Hall), thermal (heat capacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photo electron) characterization of bulk Bi2Se3 topological insulator, which is being is…

We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (3D TIs) that is capped by a ferromagnetic insulator (FI). We calculate charge…

Ni$_3$In$_2$S$_2$ is the most recent entrant into the family of topological insulator (TI) materials, the same exhibits very high MR in a low-temperature regime. Here, we report the crystal growth, the structural, micro-structural, and…

We report the magneto-conductivity analysis at different temperatures under magnetic field of up to 5Tesla of a well characterized Bi2Te3 crystal. Details of crystal growth and various physical properties including high linear magneto…

A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its peculiar topology in band structure, has attracted much interest due to academic and practical importance.…