相关论文: Spin-dependent inter- and intra-valley electron-ph…
An effective Hamiltonian which could model the interaction between a tunneling proton and the conduction electrons of a metal is investigated. A remarkably simple correlation between the motion of the $TLS$-atom and an angular-momentum…
Electron-electron and electron-phonon interactions are responsible for the formation of spin, charge, and superconducting correlations in layered quantum materials. A paradigmatic model for such materials that captures both kinds of…
We propose a simple mechanism for apparent Planckian scattering based on local polaron formation, in which $\Gamma_\text{tr} = \Gamma_0 + \alpha k_BT / \hbar$ with $\alpha \sim O(1)$ emerges from quasielastic scattering without fine tuning.…
We report first-principles calculations of electron-phonon coupling in bilayer graphene and the corresponding contribution to carrier scattering. At the phonon $\Gamma$ point, electrons with energies less than 200 meV are scattered…
We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the…
The direct bandgap found in hexagonal germanium and some of its alloys with silicon allows for an optically active material within the group-IV semiconductor family with various potential technological applications. However, there remain…
In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone,…
We study the effect of electron-phonon interactions on the electrical conductance of a helical edge state of a two-dimensional topological insulator. We show that the edge deformation caused by bulk acoustic phonons modifies the spin…
Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In…
High-order harmonic generation (HHG) in solids is profoundly influenced by the dephasing of the coherent electron-hole motion driven by an external laser field. The exact physical mechanisms underlying this dephasing, crucial for accurately…
Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and…
Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the…
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The…
We use polarized magneto-Raman scattering to study purely electronic excitations and the electron-phonon coupling in bulk graphite. At a temperature of 4.2 K and in magnetic fields up to 28 T we observe $K$-point electronic excitations…
Low-energy background through Compton scattering from the ambient $\gamma$ rays can be contaminated in direct dark matter search experiments. In this paper, we report comparable measurements on low-energy spectra via Compton scattering from…
Scattering of electrons from chiral spin textures such as the skyrmions is an emerging research area due to its richness in topological quantum transport, which is significant for spintronic devices. We study the dynamical process of…
The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is theoretically investigated. The hybridization between graphene…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
We present a detailed calculation of intensities of two-phonon and four-phonon Raman peaks in graphene. Writing the low-energy hamiltonian of the interaction of electrons with the crystal vibrations and the electromagnetic field from pure…
Employing the invariant embedding principle for the electron backscattering function, we present a scheme for constructing an electron surface scattering kernel to be used in the boundary condition for the electron Boltzmann equation of a…