相关论文: Magnetic field induced valence band mixing in [111…

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both…

We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers…

We investigate theoretically the spin purity of single holes confined in vertically coupled GaAs/AlGaAs quantum dots (QDs) under longitudinal magnetic fields. A unique behavior is observed for triangular QDs, by which the spin is largely…

The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of…

We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the…

We have calculated the conduction-to-conduction and valence-to-valence absorption spectrum of bound states in (In,Ga)As/GaAs quantum dots charged with up to three electrons or holes. Several features emerge: (i) In pure (non-alloyed)…

Recent magneto-transport experiments of holes in InGaAs quantum dots [D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, O. Wibbelhoff, C. Meier, A. Lorke, and J.C. Maan, Phys. Rev. Lett. 94, 026808 (2005)] are interpreted by employing a…

We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used,…

We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…

Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…

We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0…

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…

We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds to discuss the dependence of the hole density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a function of…

Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no…

Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively,…

We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we…

Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the…

We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of…

We present a theoretical study of the magnetic band structure of conduction and valence states in Quantum Well Wires in high magnetic fields. We show that hole mixing results in a very complex behavior of valence edge states with respect to…