相关论文: Broadband and omnidirectional anti-reflection laye…
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 {\mu}m. Achieving room temperature operation and near unity…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
We investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the…
Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies…
In this work is comprising of simulation results of amorphous Si (a-Si) solar cell, in which ITO was used as an anti-reflection coating (ARC). The thickness of ITO was optimized (65 nm) to achieve better performance for spectral region of…
The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated…
Recently, liquid-phase crystallization of thin silicon films has emerged as a promising candidate for thin-film photovoltaics. On 10 \mu m thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to a…
In this study, we designed and optimized the performance of pin junction GaAs/AlGaAs heterojunction nanowire solar cell arrays. It is done by performing coupled optoelectronic simulations to find the optimal doping for the GaAs core and…
In this paper, we have designed and investigated the performance of radial GaAs/AlGaAs pin junction nanocone array solar cells by performing coupled optoelectronic simulations to obtain the most optimal design configuration based on its…
High index dielectric nanoantennas excited at Mie-type resonances have exhibited enormous enhancement of optical nonlinearity. Such nanostructures have been actively studied by researchers in the last years. The present work provides the…
Multi-junction solar cells provide a path to overcome the efficiency limits of standard silicon solar cells by harvesting more efficiently a broader range of the solar spectrum. However, Si-based multi-junction architectures are hindered by…
We propose a light-trapping structure offering a significant enhancement of photovoltaic absorption in transparent organic solar cells operating at infrared while the visible light transmission keeps sufficiently high. The main mechanism of…
Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P…
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in…
A high theoretical efficiency of 47.2% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a simulated quadruple junction solar cell under 1 sun concentration. The electronic…
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…
Effective refractive index of disordered all-dielectric metasurfaces consisting of gallium phosphide (GaP) spheres is studied by means of three-dimensional finite-difference time-domain (FDTD) simulations at the wavelength of 532~nm. It is…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique…
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal…