Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

F. Defrance; G. Chattopadhyay; J. Connors; S. Golwala; M. I. Hollister; C. Jung-Kubiak; E. Padilla; S. Radford; J. Sayers; E. C. Tong; H. Yoshida

Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

Instrumentation and Methods for Astrophysics 2018-06-20 v2

Authors: F. Defrance , G. Chattopadhyay , J. Connors , S. Golwala , M. I. Hollister , C. Jung-Kubiak , E. Padilla , S. Radford , J. Sayers , E. C. Tong , H. Yoshida

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Abstract

Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal transmission centered on 250 GHz, and fabricated using the DRIE (Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers with single-layer coatings between 75 GHz and 330 GHz are presented and compared with the simulations.

Keywords

silicon physics diffraction gratings optical imaging

Cite

@article{arxiv.1802.04854,
  title  = {Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers},
  author = {F. Defrance and G. Chattopadhyay and J. Connors and S. Golwala and M. I. Hollister and C. Jung-Kubiak and E. Padilla and S. Radford and J. Sayers and E. C. Tong and H. Yoshida},
  journal= {arXiv preprint arXiv:1802.04854},
  year   = {2018}
}

Comments

A more detailed article has been written and is now available in arXiv (arXiv:1803.05168) and published in Applied Optics (doi: 10.1364/AO.57.005196)

Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

Abstract

Keywords

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