We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings.
@article{arxiv.1102.2241,
title = {UV anti-reflection coatings for use in silicon detector design},
author = {Erika T. Hamden and Frank Greer and Michael E. Hoenk and Jordana Blacksberg and Matthew R. Dickie and Shouleh Nikzad and Christopher D. Martin and David Schiminovich},
journal= {arXiv preprint arXiv:1102.2241},
year = {2015}
}
Comments
8 pages, 15 Figures. The following article has been submitted to Applied Optics. After it is published, it will be found at http://www.opticsinfobase.org/ao/upcoming.cfm