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We show how the phases of interacting particles in topological flat bands, known as fractional Chern insulators, can be adiabatically connected to incompressible fractional quantum Hall liquids in the lowest Landau-level of an externally…

介观与纳米尺度物理 · 物理学 2012-12-13 Thomas Scaffidi , Gunnar Moller

The Hofstadter model is a popular choice for theorists investigating the fractional quantum Hall effect on lattices, due to its simplicity, infinite selection of topological flat bands, and increasing applicability to real materials. In…

强关联电子 · 物理学 2021-09-09 Bartholomew Andrews , Titus Neupert , Gunnar Möller

In view of the evolution from the integer to fractional quantum Hall effect, the next frontier in the research of topological insulators is to investigate what happens in fractionally filled topological flat bands. A particularly pressing…

强关联电子 · 物理学 2021-09-27 Sutirtha Mukherjee , Kwon Park

A set of recent results indicates that fractionally filled bands of Chern insulators in two dimensions support fractional quantum Hall states analogous to those found in fractionally filled Landau levels. We provide an understanding of…

强关联电子 · 物理学 2012-06-26 S. A. Parameswaran , R. Roy , S. L. Sondhi

The possibility of realizing lattice analogs of fractional quantum Hall (FQH) states, so-called fractional Chern insulators (FCIs), in nearly flat topological (Chern) bands has attracted a lot of recent interest. Here, we make the…

强关联电子 · 物理学 2013-01-16 Zhao Liu , Emil J. Bergholtz

Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been…

Topological insulators and their intriguing edge states can be understood in a single-particle picture and can as such be exhaustively classified. Interactions significantly complicate this picture and can lead to entirely new insulating…

强关联电子 · 物理学 2013-09-10 Emil J. Bergholtz , Zhao Liu

We devise local lattice models whose ground states are model fractional Chern insulators---Abelian and non-Abelian topologically ordered states characterized by exact ground state degeneracies at any finite size and infinite entanglement…

强关联电子 · 物理学 2016-05-31 Jörg Behrmann , Zhao Liu , Emil J. Bergholtz

A Chern insulator (quantum anomalous Hall insulator) phase is demonstrated to exist in a typical semi-Dirac system, the TiO2/VO2 heterostructure. By combining first-principles calculations with Wannier-based tight-binding model, we…

材料科学 · 物理学 2015-11-04 Huaqing Huang , Zhirong Liu , Hongbin Zhang , Wenhui Duan , David Vanderbilt

We show that all the bands of the Hofstadter model on the torus have an exactly flat dispersion and Berry curvature when a special system size is chosen. This result holds for any hopping and Chern number. Our analysis therefore provides a…

强关联电子 · 物理学 2014-09-24 Thomas Scaffidi , Steven H. Simon

We present a pedagogical review of the physics of fractional Chern insulators with a particular focus on the connection to the fractional quantum Hall effect. While the latter conventionally arises in semiconductor heterostructures at low…

强关联电子 · 物理学 2015-10-05 S. A. Parameswaran , R. Roy , S. L. Sondhi

The stability of fractional Chern insulators is widely believed to be predicted by the resemblance of their single-particle spectra to Landau levels. We investigate the scope of this geometric stability hypothesis by analyzing the stability…

强关联电子 · 物理学 2024-06-07 Bartholomew Andrews , Mathi Raja , Nimit Mishra , Michael P. Zaletel , Rahul Roy

We investigate the fate of hardcore bosons in a Harper-Hofstadter model which was experimentally realized by Aidelsburger et al. [Nature Physics 11 , 162 (2015)] at half filling of the lowest band. We discuss the stability of an emergent…

强关联电子 · 物理学 2017-10-20 Johannes Motruk , Frank Pollmann

Lattice models forming bands with higher Chern number offer an intriguing possibility for new phases of matter with no analogue in continuum Landau levels. Here, we establish the existence of a number of new bulk insulating states at…

强关联电子 · 物理学 2012-11-06 Zhao Liu , Emil J. Bergholtz , Heng Fan , Andreas M. Laeuchli

We present a complete topological characterization of a bilayer composite of two Chern insulators (specifically, Haldane models) and explicitly establish the bulk-boundary correspondences. We show that an appropriately defined Chern number…

统计力学 · 物理学 2021-06-15 Sourav Bhattacharjee , Souvik Bandyopadhyay , Diptiman Sen , Amit Dutta

We investigate the many-body ground states in a family of fractionally-filled bands where the Berry curvature fluctuations can be tuned while maintaining ideal quantum geometry. We numerically find that the neutral gap of the fractional…

强关联电子 · 物理学 2025-12-09 Jingtian Shi , Jennifer Cano , Nicolás Morales-Durán

Two-dimensional lattice models subjected to an external effective magnetic field can form nontrivial band topologies characterized by nonzero integer band Chern numbers. In this Letter, we investigate such a lattice model originating from…

强关联电子 · 物理学 2013-11-01 Dong Wang , Zhao Liu , Junpeng Cao , Heng Fan

Chern insulators are band insulators exhibiting a nonzero Hall conductance but preserving the lattice translational symmetry. We conclusively show that a partially filled Chern insulator at 1/3 filling exhibits a fractional quantum Hall…

强关联电子 · 物理学 2015-03-19 N. Regnault , B. Andrei Bernevig

Chern insulator or quantum anomalous Hall state is a topological state with integer Hall conductivity but in absence of Landau level. It had been well established on various two-dimensional lattices with periodic structure. Here, we report…

介观与纳米尺度物理 · 物理学 2020-01-08 Ai-Lei He , Lu-Rong Ding , Yuan Zhou , Yi-Fei Wang , Chang-De Gong

We construct generalized Hofstadter models that possess "color-entangled" flat bands and study interacting many-body states in such bands. For a system with periodic boundary conditions and appropriate interactions, there exist gapped…

强关联电子 · 物理学 2015-01-29 Ying-Hai Wu , J. K. Jain , Kai Sun
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