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It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C…

介观与纳米尺度物理 · 物理学 2015-05-27 F. Hiebel , P. Mallet , J. -Y. Veuillen , L. Magaud

The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even…

材料科学 · 物理学 2016-05-06 Dmytro Solonenko , Ovidiu D. Gordan , Guy Le Lay , Dietrich R. T. Zahn , Patrick Vogt

The structure of finite-area topological defects in graphene is described in terms of both the direct honeycomb lattice and its dual triangular lattice. Such defects are equivalent to cutting out a patch of graphene and replacing it with a…

材料科学 · 物理学 2012-03-09 Eric Cockayne

The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation…

材料科学 · 物理学 2023-05-03 Luxmi , N. Srivastava , R. M. Feenstra , P. J. Fisher

In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…

介观与纳米尺度物理 · 物理学 2015-06-04 Tanmoy Basu , Jyoti Ranjan Mohanty , T. Som

Spin-orbit coupling (SOC) in graphene can be greatly enhanced by proximity coupling it to transition metal dichalcogenides (TMDs) such as WSe2. We find that the strength of the acquired SOC in graphene depends on the stacking order of the…

Stable and metastable metallic nanoparticles exhibit unique properties compared to the bulk, with potentially important applications for catalysis. This is in particular the case for the AgPt alloy that can exhibit the ordered L1$_1$…

材料科学 · 物理学 2023-07-11 F. Ait Hellal , J. Puibasset , C. Andreazza-Vignolle , P. Andreazza

Using scanning tunneling microscopy together with the first-principles density functional theory calculations we study structural properties of the Si(111)5x2-Au surface covered by Ag adatoms. The STM topography data show that a…

介观与纳米尺度物理 · 物理学 2014-10-09 A. Stepniak , M. Krawiec , M. Jalochowski

We have investigated the atomic structure of superconducting Ca-intercalated bilayer graphene on a SiC(0001) substrate using total-reflection high-energy positron diffraction. By comparing the experimental rocking-curves with ones…

材料科学 · 物理学 2019-11-20 Y. Endo , Y. Fukaya , I. Mochizuki , A. Takayama , T. Hyodo , S. Hasegawa

Bilayer silicene has richer physical properties than bilayer graphene due to its buckled structure together with its trigonal symmetric structure. The buckled structure arises from a large ionic radius of silicon, and the trigonal symmetry…

介观与纳米尺度物理 · 物理学 2012-10-01 Motohiko Ezawa

While the diffusion of hydrogen on silicon surfaces has been relatively well characterised both experimentally and theoretically, the diffusion around corners between surfaces, as will be found on nanowires and nanostructures, has not been…

材料科学 · 物理学 2014-05-19 Richard Smith , Veronika Brazdova , David R. Bowler

Honeycomb layered oxides with monovalent or divalent, monolayered cationic lattices generally exhibit myriad crystalline features encompassing rich electrochemistry, geometries and disorders, which particularly places them as attractive…

Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and…

材料科学 · 物理学 2017-11-22 M. Conrad , J. Rault , Y. Utsumi , Y. Garreau , A. Vlad , A. Coati , J. -P. Rueff , P. F. Miceli , E. H. Conrad

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…

Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…

The vicinal Si(111) surface, inclined towards the [-1-12] direction, was investigated by scanning tunnelling microscopy and spot profile analysing low energy electron diffraction. It has been established that the surface, consisting of…

材料科学 · 物理学 2019-03-19 S. A. Teys , K. N. Romanyuk , R. A. Zhachuk , B. Z. Olshanetsky

Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their…

材料科学 · 物理学 2009-11-07 J. H. G. Owen , K. Miki , H. Koh , H. W. Yeom , D. R. Bowler

We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and…

材料科学 · 物理学 2015-06-05 O. Ochedowski , G. Begall , N. Scheuschner , M. El Kharrazi , J. Maultzsch , M. Schleberger

In this work we present a detailed structural characterization of Si-4H, a newly discovered bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi-scale imaging, we reveal a hierarchical structure in the…

A new structural model of Au induced Si(553) surface is proposed. The model accounts for recently experimentally found value of the Au coverage, i.e. 0.48 monolayer, which suggests formation of two gold chains on each Si(553) terrace. The…

材料科学 · 物理学 2015-05-14 Mariusz Krawiec