相关论文: Geometric WOM codes and coding strategies for mult…

Recent developments in storage -- especially in the area of resistive random access memory (ReRAM) -- are attempting to scale the storage density by regarding the information data as two-dimensional (2D), instead of one-dimensional (1D).…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…

In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…

High density Solid State Drives, such as QLC drives, offer increased storage capacity, but a magnitude lower Program and Erase (P/E) cycles, limiting their endurance and hence usability. We present the design and implementation of…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…

We consider rank modulation codes for flash memories that allow for handling arbitrary charge-drop errors. Unlike classical rank modulation codes used for correcting errors that manifest themselves as swaps of two adjacently ranked…

\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…

In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…

In order to achieve fault tolerance, highly reliable system often require the ability to detect errors as soon as they occur and prevent the speared of erroneous information throughout the system. Thus, the need for codes capable of…

The future of main memory appears to lie in the direction of new non-volatile memory technologies that provide strong capacity-to-performance ratios, but have write operations that are much more expensive than reads in terms of energy,…

In this paper we give an explicit construction of a capacity achieving family of binary t-write WOM codes for any number of writes t, that have a polynomial time encoding and decoding algorithms. The block length of our construction is…

Linear codes over finite extension fields have widespread applications in theory and practice. In some scenarios, the decoder has a sequential access to the codeword symbols, giving rise to a hierarchical erasure structure. In this paper we…

We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost…

The two-terminal key agreement problem with biometric or physical identifiers is considered. Two linear code constructions based on Wyner-Ziv coding are developed. The first construction uses random linear codes and achieves all points of…

In this work, we study the performance of different decoding schemes for multilevel flash memories where each page in every block is encoded independently. We focus on the multi-level cell (MLC) flash memory, which is modeled as a two-user…

Weak memory models are a consequence of the desire on part of architects to preserve all the uniprocessor optimizations while building a shared memory multiprocessor. The efforts to formalize weak memory models of ARM and POWER over the…

The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect…

A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF($2^8$) is well suited. This is a type of coded modulation,…

Permutation codes and multi-permutation codes have been widely considered due to their various applications, especially in flash memory. In this paper, we consider permutation codes and multi-permutation codes against a burst of stable…

To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…