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The band bending (BB) effect on the surface of the second-generation topological insulators implies a serious challenge to design transport devices. The BB is triggered by the effective electric field generated by charged impurities close…

介观与纳米尺度物理 · 物理学 2015-12-11 P. Rakyta , B. Ujfalussy , L. Szunyogh

Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to…

Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder…

材料科学 · 物理学 2025-12-16 Kanav Sharma , Niranjay K R , Infan S Mesh , Radha Krishna Gopal , Chiranjib Mitra

Based on a self-consistent $t$-matrix approximation, we explore the influence of magnetic and nonmagnetic doping on the surface electronic states and conductivity of topological insulators. We show that warping parameter has a crucial…

介观与纳米尺度物理 · 物理学 2021-06-09 Masomeh Arabikhah , Alireza Saffarzadeh

Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard…

强关联电子 · 物理学 2013-01-28 D. Nasr Esfahani , L. Covaci , F. M. Peeters

A material which is an insulator entirely because of interaction effects is called a correlated insulator. Examples are trans-polyacetylene and the cuprate high temperature superconductors. Whereas doping of a band insulator results in a…

凝聚态物理 · 物理学 2016-08-31 S. A. Kivelson , V. J. Emery

Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the…

Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures…

Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of…

Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…

介观与纳米尺度物理 · 物理学 2015-09-01 Quansheng Wu , Liang Du , Vincent E. Sacksteder

An electrostatic field, which is applied to a gated high-temperature superconducting (HTSC) film, is believed to affect the film similar to charge doping. Analyzing the pairing in terms of a t-J model, we show that a coupling to electric…

强关联电子 · 物理学 2007-05-23 Natalia Pavlenko , Thilo Kopp

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio

Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to…

介观与纳米尺度物理 · 物理学 2012-06-04 L. A. Wray , Y. Xia , S. -Y. Xu , Y. S. Hor , R. J. Cava , A. Bansil , H. Lin , M. Z. Hasan

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…

材料科学 · 物理学 2018-05-02 Prosper Ngabonziza , Yi Wang , Alexander Brinkman

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model…

介观与纳米尺度物理 · 物理学 2020-03-05 Eylon Persky , Hyeok Yoon , Yanwu Xie , Harold Y. Hwang , Jonathan Ruhman , Beena Kalisky

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in…

介观与纳米尺度物理 · 物理学 2018-06-12 Daniel Walkup , Badih Assaf , Kane L Scipioni , R. Sankar , Fangcheng Chou , Guoqing Chang , Hsin Lin , Ilija Zeljkovic , Vidya Madhavan

The band inversion has led to rich physical effects in both topological insulators and topological semimetals. It has been found that the inverted band structure with the Mexican-hat dispersion could enhance the interband correlation…

介观与纳米尺度物理 · 物理学 2018-01-03 Furu Zhang , Jianhui Zhou , Di Xiao , Yugui Yao

In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…

We study the photon-dressed electronic band structure of topological insulator thin films which could be also doped doped by magnetic impurities in response to an off-resonance time-periodic electromagnetic field. The thin films irradiated…

介观与纳米尺度物理 · 物理学 2021-12-21 S. Sajad Dabiri , Hosein Cheraghchi , Ali Sadeghi

WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe$_2$ upon…

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