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The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure…

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf…

强关联电子 · 物理学 2012-04-25 Z. -H. Pan , E. Vescovo , A. V. Fedorov , B. Sinkovic , D. Gardner , S. Chu , Y. S. Lee , G. D. Gu , T. Valla

The possibility of realizing topological insulators by spontaneous formation of electronic superstructure is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a…

强关联电子 · 物理学 2016-06-21 Yusuke Sugita , Yukitoshi Motome

If superconductivity is induced in the metallic surface states of topological insulators via proximity, Majorana modes will be trapped on the vortex cores. The same effects hold for doped topological insulators which become bulk s-wave…

介观与纳米尺度物理 · 物理学 2013-05-30 Ching-Kai Chiu , Pouyan Ghaemi , Taylor L. Hughes

We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of…

介观与纳米尺度物理 · 物理学 2014-11-04 A. Pertsova , C. M. Canali

We investigate the electrical conductivity and thermoelectric effects in topological crystalline insulators in the presence of short- and long-range impurity interactions. We employ the generalized Boltzmann formalism for anisotropic Fermi…

介观与纳米尺度物理 · 物理学 2016-11-29 Babak Zare Rameshti , Reza Asgari

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged…

介观与纳米尺度物理 · 物理学 2012-06-08 S. Adam , E. H. Hwang , S. Das Sarma

There have recently been several experiments studying induced superconductivity in semiconducting two-dimensional electron gases that are strongly coupled to thin superconducting layers, as well as probing possible topological phases…

介观与纳米尺度物理 · 物理学 2018-04-24 Christopher Reeg , Daniel Loss , Jelena Klinovaja

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show…

强关联电子 · 物理学 2011-12-15 Maissam Barkeshli , Xiao-Liang Qi

Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence…

介观与纳米尺度物理 · 物理学 2023-02-27 Tomasz Dietl

We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of…

介观与纳米尺度物理 · 物理学 2021-05-11 Yaron Jarach , Gad Koren , Netanel H. Lindner , Amit Kanigel

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is…

We study transport and optical properties of the surface states which lie in the bulk energy gap of a thin-film topological insulator. When the film thickness is comparable with the surface state decay length into the bulk, the tunneling…

介观与纳米尺度物理 · 物理学 2010-03-04 Hai-Zhou Lu , Wen-Yu Shan , Wang Yao , Qian Niu , Shun-Qing Shen

We study the effects of e-e interaction in a 3D Crystalline Topological Insulator by adding on-site repulsion to the single-particle Hamiltonian and solving the many-body problem within Cluster Perturbation Theory. The goal is to clarify…

强关联电子 · 物理学 2021-03-17 Franca Manghi

In this work we investigate doping and temperature dependences of electronic structure of system with strong electronic correlations and strong electron-phonon interaction modeling cuprates in the frameworks of the three-band p-d-Holstein…

强关联电子 · 物理学 2016-12-09 I. A. Makarov , S. G. Ovchinnikov

We theoretically study, through combining the density functional theory and an unfolding technique, the electronic band structure and the charge doping effects for the deposition of potassium (K) on multilayer FeSe films grown on SrTiO3…

介观与纳米尺度物理 · 物理学 2016-02-24 Fawei Zheng , Li-Li Wang , Qi-Kun Xue , Ping Zhang

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…

材料科学 · 物理学 2012-02-15 M. S. Bahramy , B. -J. Yang , R. Arita , N. Nagaosa

Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have…

介观与纳米尺度物理 · 物理学 2017-07-26 M. Kotulla , U. Zülicke

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by…

强关联电子 · 物理学 2015-03-06 Paul Syers , Dohun Kim , Michael S. Fuhrer , Johnpierre Paglione