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It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…

介观与纳米尺度物理 · 物理学 2019-10-16 S. Bordacs , M. Orlita , M. Sikula , H. Murakawa , Y. Tokura

We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with…

材料科学 · 物理学 2012-09-11 C. Martin , K. H. Miller , S. Buvaev , H. Berger , X. S. Xu , A. F. Hebard , D. B. Tanner

We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…

BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…

In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of…

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…

材料科学 · 物理学 2012-02-15 M. S. Bahramy , B. -J. Yang , R. Arita , N. Nagaosa

Optical excitations of BiTeI with large Rashba spin splitting have been studied in an external magnetic field ($B$) applied parallel to the polar axis. A sequence of transitions between the Landau levels (LLs), whose energies are in…

We study the magnetic susceptibility of a layered semiconductor BiTeI with giant Rashba spin splitting both theoretically and experimentally to explore its orbital magnetism. Apart from the core contributions, a large temperature-dependent…

材料科学 · 物理学 2012-09-03 G. A. H. Schober , H. Murakawa , M. S. Bahramy , R. Arita , Y. Kaneko , Y. Tokura , N. Nagaosa

The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…

We use polarization resolved Raman spectroscopy to demonstrate that for a 3D giant Rashba system the bulk plasmon collective mode can directly couple to the Raman response even in the long wavelength $\mathbf q \rightarrow 0$ limit.…

强关联电子 · 物理学 2024-02-20 A. C. Lee , S. Sarkar , K. Du , H. -H. Kung , C. J. Won , K. Wang , S. -W. Cheong , S. Maiti , G. Blumberg

Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…

At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher…

The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries…

介观与纳米尺度物理 · 物理学 2014-02-06 C. Tournier-Colletta , G. Autès , B. Kierren , Ph. Bugnon , H. Berger , Y. Fagot-Revurat , O. V. Yazyev , M. Grioni , D. Malterre

BiTeI exhibits large Rashba spin splitting due to its noncentrosymmetric crystal structure. The study of chemical doping effect is important in order to either tune the Fermi level or refine the crystal quality. Here, we report the…

We theoretically propose the necessary conditions for realization of giant Rashba splitting in bulk systems. In addition to (i) the large atomic spin-orbit interaction in an inversion-asymmetric system, the following two conditions are…

材料科学 · 物理学 2011-09-26 M. S. Bahramy , R. Arita , N. Nagaosa

Transition metal dichalcogenide (TMD) monolayers MXY (M=Mo, W, X(not equal to)Y=S, Se, Te) are two-dimensional polar semiconductors. Setting WSeTe monolayer as an example and using density functional theory calculations, we investigate the…

We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to…

The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…

介观与纳米尺度物理 · 物理学 2019-07-17 Mahmoud M. Asmar , Wang-Kong Tse

The Rashba effect, which plays a crucial role in fundamental materials physics and potential spintronics applications, has been engineered in diverse systems, including semiconductor quantum wells, oxide heterostructures, metallic surfaces,…

The optical transitions between spin-polarized bands of the quasi-two dimensional Rashba system BiTeI are investigated using polarization resolved resonant Raman spectroscopy. We detect chiral excitations between states with opposite…

强关联电子 · 物理学 2022-04-27 A. C. Lee , B. Peng , K. Du , H. -H. Kung , B. Monserrat , S. -W. Cheong , C. J. Won , G. Blumberg
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