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Current methods of chemical vapor deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a…

We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition(CVD). Controlling both the…

Applying time-dependent photoemission we unravel the graphene growth process on a metallic surface by chemical vapor deposition (CVD). Graphene CVD growth is in stark contrast to the standard growth process of two--dimensional films because…

材料科学 · 物理学 2015-05-13 Alexander Grüneis , Kurt Kummer , Denis V. Vyalikh

We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled…

We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase.…

Understanding the competition between first-layer lateral expansion and second-layer nucleation is essential for layer-controlled graphene growth via chemical vapor deposition (CVD). Building on our previous phase diagram framework based on…

材料科学 · 物理学 2026-05-21 Tongtong Wang , Ke Jin , Yishi Zhang , Dajun Shu

The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the…

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer…

We evaluate how a second graphene layer forms and grows on Cu foils during chemical vapor deposition (CVD). Low-energy electron diffraction and microscopy is used to reveal that the second layer nucleates and grows next to the substrate,…

材料科学 · 物理学 2015-06-04 Shu Nie , Wei Wu , Shirui Xing , Qingkai Yu , Jiming Bao , Shin-shem Pei , Kevin F. McCarty

Graphene has been suggested as an ultimately thin functional coating for metallurgical alloys such as steels. However, even on pure iron (Fe), the parent phase of steels, growth of high quality graphene films remains largely elusive to…

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene…

The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on…

We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy…

材料科学 · 物理学 2011-07-15 Daniel R. Lenski , Michael S. Fuhrer

We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000 {\deg}C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed an optical device to…

介观与纳米尺度物理 · 物理学 2012-03-01 C. Bautista , D. Mendoza

Chemical Vapor Deposition (CVD) of graphene on copper is one of the most efficient technologies for producing high quality graphene for large areas. Nevertheless, still high pressures and big quantities of precursor gas are currently…

材料科学 · 物理学 2014-09-18 V-M. Freire , A. Ramirez , E. Pascual , E. Bertran , J-L. Andujar

The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using 12CH4 and 13CH4 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth…

介观与纳米尺度物理 · 物理学 2012-08-29 Martin Kalbac , Otakar Frank , Ladislav Kavan

Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equivalently large grain size has not been reported yet. In this…

We demonstrate rapid deterministic (seeded) growth of large single-crystals of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper substrates with chromium nucleation sites. Arrays of graphene single-crystals as…

We present magnetoresistance measurements on large scale monolayer graphene grown by chemical vapor deposition (CVD) on copper. The graphene layer was transferred onto SiO2/Si via PMMA and thermal release tape for transport measurements.…

无序系统与神经网络 · 物理学 2011-10-18 Eric Whiteway , Victor Yu , Josianne Lefebvre , Robert Gagnon , Michael Hilke

Understanding the atomistic mechanism in graphene growth is crucial for controlling the number of layers or domain sizes to meet practical needs. In this work, focusing on the growth of graphene by chemical vapor deposition on copper…

材料科学 · 物理学 2024-06-12 Tongtong Wang , Jian Zheng , Xin Wei , Dajun Shu
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