中文
相关论文

相关论文: Dynamics of Charge Flow in the Channel of a Thin-F…

200 篇论文

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…

材料科学 · 物理学 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Toshihiro Shimada , Koichiro Saiki

Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…

We report the results of Monte Carlo simulation of electron dynamics in stationary and space- and time-dependent electric fields in compensated GaN samples. We have determined the frequency and wavevector dependencies of the dynamic…

材料科学 · 物理学 2019-04-19 G. I. Syngayivska , V. V. Korotyeyev , V. A. Kochelap , L. Varani

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect…

材料科学 · 物理学 2015-05-18 E. G. Bittle , J. W. Brill , J. E. Anthony

We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…

强关联电子 · 物理学 2023-11-21 A. S. Furman

Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…

其他凝聚态物理 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

In a previous paper we suggested that a macroscopic force field applied across a two-dimensional electron gas channel could induce a microscopic charge density wave as soon as the proper compressibility becomes negative, which happens at…

介观与纳米尺度物理 · 物理学 2020-11-24 Erica Hroblak , Mohammad Zarenia , Giovanni Vignale

Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting…

无序系统与神经网络 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of…

介观与纳米尺度物理 · 物理学 2022-01-03 G. I. Zebrev , D. S. Malich

We measure the complex impedance between source/drain electrodes and the gate electrode of a pentacene thin-film transistor (TFT) at frequencies 50 Hz < omega/2pi < 20 kHz. Modeling the TFT as a distributed RC network (RC transmission…

材料科学 · 物理学 2009-06-10 Daniel R. Lenski , Adrian Southard , Michael S. Fuhrer

Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…

无序系统与神经网络 · 物理学 2024-11-19 Jia Yu , Yuchen Zhou , Xiao Wang , Ananth Dodabalapur , Keji Lai

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

材料科学 · 物理学 2012-12-20 Emily G. Bittle , Joseph W. Brill , Joseph P. Straley

A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure…

超导电性 · 物理学 2009-09-29 Todor Mishonov , Martin Stoev

We analyze the influence of the magnetic field generated by the supercurrents (self-field) on the current density distribution by numerical simulations. The thickness of the superconducting film determines the self-field and consequently…

超导电性 · 物理学 2010-01-21 F. Hengstberger , M. Eisterer , H. W. Weber

We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality…

介观与纳米尺度物理 · 物理学 2012-05-15 A. K. M. Newaz , D. A. Markov , D. Prasai , K. I. Bolotin

The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…

介观与纳米尺度物理 · 物理学 2024-02-06 P. Xu , H. Luo

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in…

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…

介观与纳米尺度物理 · 物理学 2011-10-31 Kartik Ganapathi , Youngki Yoon , Sayeef Salahuddin
‹ 上一页 1 2 3 10 下一页 ›