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Molybdenum disulfide (MoS2) is a highly attractive 2D material due to its interesting electronic properties. Recent experimental advances confirm the possibility of further tuning the electronic properties of MoS2 through the fabrication of…

材料科学 · 物理学 2017-04-17 B Mortazavi , A Ostadhossein , T Rabczuk , ACT van Duin

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for…

介观与纳米尺度物理 · 物理学 2018-07-03 Marcos H. D. Guimaraes , Hui Gao , Yimo Han , Kibum Kang , Saien Xie , Cheol-Joo Kim , David A. Muller , Daniel C. Ralph , Jiwoong Park

In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer…

介观与纳米尺度物理 · 物理学 2019-12-11 Aron Szabo , Achint Jain , Markus Parzefall , Lukas Novotny , Mathieu Luisier

Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the…

材料科学 · 物理学 2016-06-10 Alejandro Molina-Sánchez , Kerstin Hummer , Ludger Wirtz

Piezoelectricity offers precise and robust conversion between electricity and mechanical force. Here we report the first experimental evidence of piezoelectricity in a single layer of molybdenum disulfide (MoS2) crystal as a result of…

材料科学 · 物理学 2014-09-01 Hanyu Zhu , Yuan Wang , Jun Xiao , Ming Liu , Shaomin Xiong , Zi Jing Wong , Ziliang Ye , Xiaobo Yin , Xiang Zhang

Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the {\aa}ngstr\"om-thickness regime [Nature 639, 354 (2025)]. However,…

The high contact resistance between MoS$_2$ and metals hinders its potential as an ideal solution for overcoming the short channel effect in silicon-based FETs at sub-3nm scales. We theoretically designed a MoS$_2$-based transistor,…

介观与纳米尺度物理 · 物理学 2024-12-25 Huan Wang , Xiaojie Liu , Hui Wang , Yin Wang , Haitao Yin

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2…

介观与纳米尺度物理 · 物理学 2013-06-18 Han Liu , Mengwei Si , Sina Najmaei , Adam T. Neal , Yuchen Du , Pulickel M. Ajayan , Jun Lou , Peide D. Ye

Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider…

介观与纳米尺度物理 · 物理学 2014-04-08 Jiwon Chang , Stefano Larentis , Emanuel Tutuc , Leonard F. Register , Sanjay K. Banerjee

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…

介观与纳米尺度物理 · 物理学 2015-02-17 Song-Lin Li , K. Komatsu , Shu Nakaharai , Yen-Fu Lin , M. Yamamoto , X. F. Duan , K. Tsukagoshi

Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in…

材料科学 · 物理学 2015-06-15 Mohamed Boukhicha , Matteo Calandra , Marie-Aude Measson , Ophelie Lancry , Abhay Shukla

Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the…

Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains…

材料科学 · 物理学 2016-05-03 Miquel López-Suárez , Igor Neri , Riccardo Rurali

The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high…

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find…

介观与纳米尺度物理 · 物理学 2017-07-26 R. S. Sundaram , M. Engel , A. Lombardo , R. Krupke , A. C. Ferrari , Ph. Avouris , M. Steiner

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor…

介观与纳米尺度物理 · 物理学 2014-06-25 Udai Bhanu , Muhammad R. Islam , Laurene Tetard , Saiful I. Khondaker

Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMD) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for…

材料科学 · 物理学 2014-10-31 Yuchen Du , Lingming Yang , Han Liu , Peide D. Ye

Molybdenum disulfide (MoS2) is a layered material of transition metal dichalcogenides (TMDCs) with a high refractive index in the visible and infrared spectral range. Therefore, by constructing MoS2 into dielectric nanoresonators, one can…

Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a…