中文
相关论文

相关论文: Growth of graphene on 6H-SiC by molecular dynamics…

200 篇论文

Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we…

Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface steps under epitaxial graphene on SiC is an important…

介观与纳米尺度物理 · 物理学 2016-11-29 James Palmer , Jan Kunc , Yike Hu , John Hankinson , Zelei Guo , Claire Berger , Walt de Heer

One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in…

Recent experimental studies have observed a surprisingly wide range of strengths in polycrystalline graphene. Previous computational investigations of graphene tilt boundaries have highlighted the role of interfacial topology in determining…

材料科学 · 物理学 2025-09-23 Matthew Daly , Chandra Veer Singh

Nitrogenated holey graphene (NHG), a two-dimensional graphene-derived material with a C2N stoichiometry and evenly distributed holes and nitrogen atoms in its basal plane, has recently been synthesized. We performed first principles…

材料科学 · 物理学 2017-04-06 Bohayra Mortazavi , Obaidur Rahaman , Timon Rabczuk , Luiz Felipe C. Pereira

Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of…

The 5x5, 6rt(3)x6rt(3)-R30deg, and graphene-covered 6rt(3)x6rt(3)-R30deg reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For the 5x5 structure a rich spectrum of surface states is…

材料科学 · 物理学 2010-11-23 Shu Nie , R. M. Feenstra

Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering…

We study the superconducting phase transition, both in a graphene bilayer and in graphite. For that purpose we derive the mean-field effective potential for a stack of graphene layers presenting hopping between adjacent sheets. For…

超导电性 · 物理学 2020-10-05 Lizardo H. C. M. Nunes , E. C. Marino , A. L. Mota

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the…

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been…

介观与纳米尺度物理 · 物理学 2015-06-11 P. Vasek , L. Smrcka , P. Svoboda , V. Jurka , M. Orlita , D. K. Maude , W. Strupinski , R. Stepniewski , R. Yakimova

Graphene outstanding properties directly come from its pecular electronic structure and thus from the honeycomb lattice symmetry. The way interaction with the substrate impact this lattice is of primary importance. This is peculiarly true…

材料科学 · 物理学 2007-12-21 F. Varchon , P. Mallet , J. -Y. Veuillen , L. Magaud

Here we report chemical vapor deposition of graphene on gold surface at ambient pressure. We studied effects of the growth temperature, pressure and cooling process on the grown graphene layers. The Raman spectroscopy of the samples reveals…

介观与纳米尺度物理 · 物理学 2015-05-27 Tuba Oznuluer , Ercag Pince , Emre O. Polat , Osman Balci , Omer Salihoglu , Coskun Kocabas

High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously…

First-principles surface phase diagrams reveal that epitaxial monolayer graphene films on the Si side of 3C-SiC(111) can exist as thermodynamically stable phases in a narrow range of experimentally controllable conditions, defining a path…

材料科学 · 物理学 2014-11-21 Lydia Nemec , Volker Blum , Patrick Rinke , Matthias Scheffler

It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C…

介观与纳米尺度物理 · 物理学 2015-05-27 F. Hiebel , P. Mallet , J. -Y. Veuillen , L. Magaud

We found an intrinsic redistribution of charge arises between epitaxial graphene, which has intrinsically n-type doping, and an undoped substrate. In particular, we studied in detail epitaxial graphene layers thermally elaborated on…

The mechanical response of single and multiple graphene sheets under uniaxial compressive loads was studied with molecular dynamics simulations, using different semi-empirical force fields at different boundary conditions or constrains.…

材料科学 · 物理学 2018-05-01 A. P. Sgouros , G. Kalosakas , C. Galiotis , K. Papagelis

We study the structural and thermodynamic properties of bilayer graphene, a prototype two-layer membrane, by means of Monte Carlo simulations based on the empirical bond order potential LCBOPII. We present the temperature dependence of…

材料科学 · 物理学 2015-05-18 K. V. Zakharchenko , J. H. Los , M. I. Katsnelson , A. Fasolino

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties.…

材料科学 · 物理学 2013-07-23 Ting Fung Chung , Tian Shen , Helin Cao , Luis A. Jauregui , Wei Wu , Qingkai Yu , David Newell , Yong P. Chen
‹ 上一页 1 8 9 10 下一页 ›