We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
@article{arxiv.1206.1710,
title = {Epitaxial graphene morphologies probed by weak (anti)-localization},
author = {Ather Mahmood and Cécile Naud and Clément Bouvier and Fanny Hiebel and Pierre Mallet and Jean-Yves Veuillen and Laurent Levy and Didier Chaussende and Thierry Ouisse},
journal= {arXiv preprint arXiv:1206.1710},
year = {2015}
}