We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.
@article{arxiv.0908.1900,
title = {How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect},
author = {Johannes Jobst and Daniel Waldmann and Florian Speck and Roland Hirner and Duncan K. Maude and Thomas Seyller and Heiko B. Weber},
journal= {arXiv preprint arXiv:0908.1900},
year = {2013}
}