相关论文: Counting statistics in an InAs nanowire quantum do…

We investigate out of equilibrium transport through an orbital Kondo system realized in a single quantum dot, described by the multiorbital impurity Anderson model. Shot noise and current are calculated up to the third order in bias voltage…

We study frequency-dependent current noise through a single-level quantum dot connected to ferromagnetic leads with non-collinear magnetization. We propose to use the frequency-dependent Fano factor as a tool to detect single-spin dynamics…

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…

We develop methods for calculating the zero-frequency noise for quantum shuttles, i.e. nanoelectromechanical devices where the mechanical motion is quantized. As a model system we consider a three-dot array, where the internal electronic…

The shot noise of a one-dimensional wire interrupted by two barriers shows interesting features related to the interplay between Coulomb blockade effects, Luttinger correlations and discrete excitations. At small bias the Fano factor…

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…

Transport measurements are presented on a quantum ring that is tunnel-coupled to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly coupled to the open ring, Fano line shapes are observed in the current through the…

We carry out a detailed analysis of coherent resonant tunneling through two coupled quantum dots (CQD) in a parallel arrangement in the weak tunneling limit. We establish a set of quantum rate equations (QREs) in terms of the…

In this paper, we carry out a theoretical analysis of the zero-frequency and finite-frequency shot noise in electron tunneling through a two-level interacting system connected to two leads, when a coherent coupling between the two levels is…

We study nonequilibrium transport through a charge Kondo device realizing the two-channel Kondo critical point in a recent experiment by Iftikhar et al. By computing the current and shot noise at low voltages near the critical point, we…

Electron transport through parallel double quantum dot system with interdot tunneling and strong on-site Coulomb interaction is studied in the Kondo regime by using the finite-$U$ slave boson technique. For a system of quantum dots with…

Shot noise is a powerful tool to probe correlations and microscopic transport details that conductance measurements alone cannot reveal. Even in atomic-scale Au devices that are well described by Landauer-B{\"u}ttiker physics, complications…

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…

We analyze an AC-driven dimer chain connected to a strongly biased electron source and drain. It turns out that the resulting transport exhibits fingerprints of topology. They are particularly visible in the driving-induced current…

We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical…

Electron-electron interactions play a major role in determining the low-temperature rate of phase loss of electrons in mesoscopic systems. The study of the dephasing rate is expected to contribute to the understanding of the many-body…

Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function…

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…

We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…