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We report shot noise spectroscopy on a semiconductor quantum dot in a cotunneling regime. The DC conductance measurements show clear signatures of both elastic and inelastic cotunneling transport inside a Coulomb diamond. We observed…

介观与纳米尺度物理 · 物理学 2013-01-10 Yuma Okazaki , Satoshi Sasaki , Koji Muraki

We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias,…

介观与纳米尺度物理 · 物理学 2007-05-23 L. DiCarlo , Yiming Zhang , D. T. McClure , D. J. Reilly , C. M. Marcus , L. N. Pfeiffer , K. W. West , M. P. Hanson , A. C. Gossard

The fluctuations of electrical current provide information on the dynamics of electrons in quantum devices. Understanding the nature of these fluctuations in a quantum dot is thus a crucial step insofar as this system is the elementary…

介观与纳米尺度物理 · 物理学 2018-10-08 A. Crépieux , S. Sahoo , T. Q. Duong , R. Zamoum , M. Lavagna

The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create…

介观与纳米尺度物理 · 物理学 2023-04-24 Nilayan Paul , Basudev Nag Chowdhury , Sanatan Chattopadhyay

We derive the symmetrized current-noise spectrum of a quantum dot, which is weakly tunnel-coupled to an electron reservoir and driven by a slow time-dependent gate voltage. This setup can be operated as an on-demand emitter of single…

介观与纳米尺度物理 · 物理学 2018-09-12 Niklas Dittmann , Janine Splettstoesser

The progress in nanofabrication, measurement technology, and mesoscopic transport theory has been expanding the field of shot noise. Although a wave-packet approach to DC shot noise of independent electrons at finite temperature was offered…

介观与纳米尺度物理 · 物理学 2012-11-27 Hiroyuki Inoue

We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model…

介观与纳米尺度物理 · 物理学 2007-05-23 C. Fuhner , U. F. Keyser , R. J. Haug , D. Reuter , A. D. Wieck

The conductance quantization and shot noise below the first conductance plateau $G_0 = 2e^2/h$ are measured in a quantum point contact fabricated in a GaAs/AlGaAs tunnel-coupled double quantum well. From the conductance measurement, we…

介观与纳米尺度物理 · 物理学 2020-03-25 D. Terasawa , S. Norimoto , T. Arakawa , M. Ferrier , A. Fukuda , K. Kobayashi , Y. Hirayama

We report on a comprehensive study of spin-1/2 Kondo effect in a strongly-coupled quantum dot realized in a high-quality InAs nanowire. The nanowire quantum dot is relatively symmetrically coupled to its two leads, so the Kondo effect…

We report an experimental study on the shot noise as well as the dc transport properties of a quantum point contact (QPC) whose conductance anomaly can be tuned electrostatically by the gate electrodes. By controlling the single QPC so that…

介观与纳米尺度物理 · 物理学 2009-06-08 Shuji Nakamura , Masayuki Hashisaka , Yoshiaki Yamauchi , Shinya Kasai , Teruo Ono , Kensuke Kobayashi

We investigate shot noise at {\it finite temperatures} induced by the quasi-particle tunneling between fractional quantum Hall (FQH) edge states. The resulting Fano factor has the peak structure at a certain bias voltage. Such a structure…

介观与纳米尺度物理 · 物理学 2012-04-10 E. Iyoda , T. Fujii

A theoretical study on electrical current fluctuations in a double quantum dot connected to electronic reservoirs is presented, with the aim of deriving the finite-frequency noise, the Fano factor and the $\Delta T$-noise. We establish a…

介观与纳米尺度物理 · 物理学 2024-12-09 A. Crépieux , T. Q. Duong , M. Lavagna

Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they…

介观与纳米尺度物理 · 物理学 2013-07-15 Y. Komijani , T. Choi , F. Nichele , K. Ensslin , T. Ihn , D. Reuter , A. D. Wieck

We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate…

介观与纳米尺度物理 · 物理学 2010-09-30 Y. Kanai , R. S. Deacon , A. Oiwa , K. Yoshida , K. Shibata , K. Hirakawa , S. Tarucha

The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which…

材料科学 · 物理学 2009-10-31 Craig Pryor

The Wiedemann-Franz law states that the charge conductance and the electronic contribution to the heat conductance are proportional. This sets stringent constraints on efficiency bounds for thermoelectric applications, which seek for large…

介观与纳米尺度物理 · 物理学 2023-04-11 D. Majidi , M. Josefsson , M. Kumar , M. Leijnse , L. Samuelson , H. Courtois , C. B. Winkelmann , V. F. Maisi

Motivated by recent experiment, we consider charging of a nanowire which is proximitized by a superconductor and connected to a normal-state lead by a single-channel junction. The charge $Q$ of the nanowire is controlled by gate voltage…

介观与纳米尺度物理 · 物理学 2019-10-29 Roman M. Lutchyn , Karsten Flensberg , Leonid I. Glazman

The Fano effect, which occurs through the quantum-mechanical cooperation between resonance and interference, can be observed in electron transport through a hybrid system of a quantum dot and an Aharonov-Bohm ring. While a clear correlation…

介观与纳米尺度物理 · 物理学 2016-08-31 Kensuke Kobayashi , Hisashi Aikawa , Shingo Katsumoto , Yasuhiro Iye

We present a theoretical study of time-dependent quantum transport in a resonant tunnel junction coupled to a nanomechanical oscillator within the non-equilibrium Green's function technique. An arbitrary voltage is applied to the tunnel…

介观与纳米尺度物理 · 物理学 2015-05-18 M. Tahir , A. MacKinnon

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…

介观与纳米尺度物理 · 物理学 2010-10-05 M. D. Schroer , J. R. Petta