Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot
介观与纳米尺度物理
2007-05-23 v1
摘要
We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model explaining the temperature and V_{SD} dependence of the resonances. The Fano regime allows to investigate phase and coherence of the electronic wave function and astonishingly, we find no signs of decoherence in our system.
引用
@article{arxiv.cond-mat/0307590,
title = {Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot},
author = {C. Fuhner and U. F. Keyser and R. J. Haug and D. Reuter and A. D. Wieck},
journal= {arXiv preprint arXiv:cond-mat/0307590},
year = {2007}
}
备注
4 pages, 4 figures