相关论文: Atomic-scale model for the contact resistance of t…

Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus…

Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We…

The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…

We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…

A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact.…

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one…

The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal.…

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process,…

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated…

We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap,…

Conductance of zigzag interfaces between graphene sheet and normal metal is investigated in the tight-binding approximation. Boundary conditions, valid for a variety of scattering problems, are constructed and applied to the normal metal --…

Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalization. Using first principles calculations based on density functional theory (DFT)…

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…

We present ab-initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for…

The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential…

Minimal conductivity of a single undoped graphene layer is known to be of the order of the conductance quantum, independent of the electron velocity. We show that this universality does not survive electron-electron interaction which…

The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to…

We calculate theoretically the Coulomb drag resistivity for two graphene monolayers spatially separated by a distance "$d$". We show that the frictional drag induced by inter-layer electron-electron interaction goes asymptotically as…

Two processes have been proposed to fabricate graphene/NiFe alloy interfaces for tunneling magnetoresistance devices. One is the transfer of graphene and the other is the evaporation of alloys onto graphene. The formation energy of a NiFe…