相关论文: Scaling of NonOhmic Conduction in Strongly Correla…

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

Transfer-matrix methods, with the help of finite-size scaling and conformal invariance concepts, are used to investigate the critical behavior of two-dimensional square-lattice Ising spin-1/2 systems with first- and second-neighbor…

In extensive Monte Carlo simulations the phase transition of the random field Ising model in three dimensions is investigated. The values of the critical exponents are determined via finite size scaling. For a Gaussian distribution of the…

Incommensurate charge order in hole-doped oxides is intertwined with exotic phenomena such as colossal magnetoresistance, high-temperature superconductivity, and electronic nematicity. Here, we map at atomic resolution the nature of…

Itinerant metamagnetism transition is observed and studied in perovskite La1-xCaxMn0.90Cu0.10O3 system for x = 0.30. At a constant low temperature, 10 K < T < 150 K, there is a continuous second-order metamagnetism jump from a low magnetic…

The \textit{I-V} characteristics of four conducting polymer systems like doped polypyrrole (PPy), poly 3,4 ethylene dioxythiophene (PEDOT), polydiacetylene (PDA) and polyaniline (PA) in as many physical forms have been investigated at…

Unidirectionally coupled systems which exhibit phase transitions into an absorbing state are investigated at the multicritical point. We find that for initial conditions with isolated particles, each hierarchy level exhibits an…

Magnetic field and temperature dependence of the Terahertz conductivity and permittivity of the colossal magnetoresistance manganite Pr_{0.65}Ca_{0.28}Sr_{0.07}MnO_3 (PCSMO) is investigated approaching the metal-to-insulator transition…

Transition-metal perovskite oxides exhibit a wide range of extraordinary but imperfectly understood phenomena. Charge, spin, orbital, and lattice degrees of freedom all undergo order-disorder transitions in regimes not far from where the…

We show that scaling arguments are very useful to analyze the dynamics of periodically modulated noisy systems. Information about the behavior of the relevant quantities, such as the signal-to-noise ratio, upon variations of the noise…

We observed a dramatic peak in the 1/f noise at the metal-insulator transition (MIT) in low-Tc manganites. This many-orders-of-magnitude noise enhancement is observed for both polycrystalline and single-crystal samples of…

At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…

The scaling of the thermoremanent magnetization and of the dissipative part of the non-equilibrium magnetic susceptibility is analysed as a function of the waiting-time $s$ for a simple ferromagnet undergoing phase-ordering kinetics after a…

We analyzed the magnetic behavior of a S-spin system within framework of the Tsallis nonextensive statistics, employing the normalized approach. Unusual properties on magnetization, entropy and susceptibility emerge, as a consequence of…

The scaling properties of various composite information-theoretic measures (Shannon and R\'enyi entropy sums, Fisher and Onicescu information products, Tsallis entropy ratio, Fisher-Shannon product and shape complexity) are studied in…

We have reexamined data on the possible two dimensional metal-insulator transition at B=0 in Si-MOSFETs using a nonlinear regression method to extract all scaling parameters in a single fit. By keeping track of the magnitude of errors in…

In the absence of magnetic field or spin-orbit coupling the one-parameter scaling theory predicts localization of all states in two-dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been…

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

Based on the spectral statistics obtained in numerical simulations on three dimensional disordered systems within the tight--binding approximation, a new superuniversal scaling relation is presented that allows us to collapse data for the…

We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, $\beta_{T}/p = (-1/p)d(\ln g)/d(\ln T)$ is universal (with $p$, a sample dependent exponent, determined…