相关论文: The critical temperature regions in resistive swit…
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
The layered compound BaCo1-xNixS2-y (0.05<x<0.2 and 0.05<y<0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around…
The resistivity behavior of inhomogeneous superconductors with random $\pi$ junctions, as in high-$T_c$ materials with d-wave symmetry, is studied by numerical simulation of a three-dimensional XY spin glass model. Above a concentration…
Two principles govern the critical temperature for superconducting transitions: (1)~intrinsic strength of the pair coupling and (2)~effect of the many-body environment on the efficiency of that coupling. Most discussions take into account…
We report observation of electric-field-driven resistive transition at a characteristic threshold field $E_{th}(T)$ across a temperature range 10-200 K in an off-stoichiometric composite of (~80 vol%) W- and (~20 vol%) Z-type hexaferrites.…
We investigate numerically the resistive transition in the two-dimensional XY gauge glass model. The resistively-shunted junction dynamics subject to the fluctuating twist boundary condition is used and the linear resistances in the absence…
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application…
The nature of the resistive transition for a current applied parallel to the magnetic field in high-Tc materials is investigated by numerical simulation on the three dimensional Josephson junction array model. It is shown by using finite…
We measured the critical temperatures and critical switching and retrapping currents of wide and narrow thin-film quasi-one-dimensional superconducting aluminum structures of the same thickness in zero magnetic field. For the first time, we…
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
We have fabricated oxygen deficient polycrystalline ZnO films by the rf sputtering deposition method. To systematically investigate the charge transport mechanisms in these samples, the electrical resistivities have been measured over a…
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a…
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as…
The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their…