English

Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Mesoscale and Nanoscale Physics 2015-05-18 v1

Abstract

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.

Keywords

Cite

@article{arxiv.1004.3909,
  title  = {Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions},
  author = {A. Plecenik and M. Tomasek and T. Plecenik and M. Truchly and J. Noskovic and M. Zahoran and T. Roch and M. Belogolovskii and M. Spankova and S. Chromik and P. Kus},
  journal= {arXiv preprint arXiv:1004.3909},
  year   = {2015}
}

Comments

To be published in Applied Surface Science.

R2 v1 2026-06-21T15:13:31.930Z