相关论文: Non-volatile Complementary Resistive Switch-based …

Integrating the ATLAS/BNL VMM3a ASIC (Application Specific Integrated Circuit) into the RD51/SRS (Scalable Readout System) provides a self-triggered continuous readout system for various gaseous detectors. Since the system allows flexible…

A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…

Let $[q\rangle$ denote the integer set $\{0,1,\ldots,...,q-1\}$ and let $\mathbb{B}=\{0,1\}$. The problem of implementing functions $[q\rangle\rightarrow\mathbb{B}$ on content-addressable memories (CAMs) is considered. CAMs can be…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

Fast parallel search capabilities on large datasets provided by content addressable memories (CAM) are required across multiple application domains. However compared to RAM, CAMs feature high area overhead and power consumption, and as a…

Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4 using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random Access Memory (RRAM) device. The fabricated RRAM device shows good retention, non volatile…

Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…

This work introduces a fully tunable, ultra-low power unipolar memory cell inspired by the Schmitt-trigger comparator and designed in CMOS using only nine transistors. The proposed circuit operates entirely in the current domain and…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…

In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of…

Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning,…

Long Short-Term Memory (LSTM) Recurrent Neural networks (RNNs) rely on gating signals, each driven by a function of a weighted sum of at least 3 components: (i) one of an adaptive weight matrix multiplied by the incoming external input…

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…

In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…

We have calculated the key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity - "CrossNets". Such networks may be naturally implemented in…

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…