相关论文: Non-volatile Complementary Resistive Switch-based …

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…

Due to many limitations of Von Neumann architecture such as speed, memory bandwidth, efficiency of global interconnects and increase in the application of artificial neural network, researchers have been pushed to look into alternative…

Recurrent neural networks (RNNs) provide state-of-the-art performances in a wide variety of tasks that require memory. These performances can often be achieved thanks to gated recurrent cells such as gated recurrent units (GRU) and long…

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for…

A double self-sustainable reconfigurable intelligent surfaces (RISs) assisted multi-user multiple input multiple output (MIMO) system is investigated. Two RISs are equipped with energy harvesting circuit to achieve self-sustainable…

The present work focuses on experimental investigations of a bistabile silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable…

The transcription of handwritten text on images is one task in machine learning and one solution to solve it is using multi-dimensional recurrent neural networks (MDRNN) with connectionist temporal classification (CTC). The RNNs can contain…

Resistive Random Access Memory (RRAM) is an emerging device for processing-in-memory (PIM) architecture to accelerate convolutional neural network (CNN). However, due to the highly coupled crossbar structure in the RRAM array, it is…

High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…

Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…

In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…

Non-Volatile Memories (NVMs) such as Resistive RAM (RRAM) are used in neuromorphic systems to implement high-density and low-power analog synaptic weights. Unfortunately, an RRAM cell can switch its state after reading its content a certain…

Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…

We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an…

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…

Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…

This paper presents the performance of an AC transmission switching (TS) based real-time contingency analysis (RTCA) tool that is introduced in Part I of this paper. The approach quickly proposes high quality corrective switching actions…