相关论文: Non-volatile Complementary Resistive Switch-based …

Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are…

Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…

Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the…

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…

Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but…

As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…

Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work…

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…

Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary…

The increasing computational demand of Convolutional Neural Networks (CNNs) necessitates energy-efficient acceleration strategies. Compute-in-Memory (CIM) architectures based on Resistive Random Access Memory (RRAM) offer a promising…

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…

Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…

A content-addressable-memory compares an input search word against all rows of stored words in an array in a highly parallel manner. While supplying a very powerful functionality for many applications in pattern matching and search, it…

Since its inception the memristive fuse has been a good example of how small numbers of memristors can be combined to obtain useful behaviours unachievable by individual devices. In this work, we link the memristive fuse concept with that…

Decision trees are considered one of the most powerful tools for data classification. Accelerating the decision tree search is crucial for on-the-edge applications that have limited power and latency budget. In this paper, we propose a…