相关论文: Si nanoparticle interfaces in Si/SiO2 solar cell m…
The advances in novel low-loss "on insulator" integrated photonics platforms beyond silicon, such as thin-film LiNbO3, LiTaO3, GaP and BaTiO3 have demonstrated major potential across a wide range of applications, due to their unique…
The spatial structure of the transition region between an insulator and an electrolyte solution was studied with x-ray scattering.The electron density profile across the n-hexane/silica sol interface (solutions with 5-nm, 7-nm, and 12-nm…
Silica aerogels are nanoporous materials with exceptional optical and physical properties, making them promising candidates to enhance solar cell efficiency as antireflective coatings. This study synthesized hydrophobic silica aerogel thin…
Wide-gap Cu(In,Ga)S2 solar cells with In2O3:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cell performance is investigated by supplying additional Na by…
We have employed state-of-the-art cross-correlation noise spectroscopy to study carrier dynamics in silicon heterojunction solar cells, complimented by SENTARUS simulations of the same devices. These cells were composed of a light absorbing…
The dynamic magnetic properties of Ni nanoparticles diluted in an amorphous SiO2 matrix prepared from a modified sol-gel method have been studied by the frequency f dependence of the ac magnetic susceptibility \c{hi}(T). For samples with…
The polarization- and angle- resolved optical response of the anapole mode in silicon nano-disks array have been experimentally and theoretically investigated. The good agreement betweenmeasured data and simulations yields to a consistent…
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has…
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by…
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…
A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A…
Bi$_2$Se$_3$ and Bi$_2$Te$_3$, and these same surfaces covered with Bi films, are exposed to Br$_2$ and Cl$_2$ in ultra-high vacuum. Low energy electron diffraction (LEED) and low energy ion scattering (LEIS) are used to investigate the…
We measure and model electroadhesion across multi-asperity silicon interfaces with nanometer scale roughness. When electrically biased, our naturally oxidized silicon interfaces display a leakage current consistent with the Fowler-Nordheim…
Indium phosphide and derived compound semiconductors are materials often involved in high-efficiency solar water splitting due to their versatile opto-electronic properties. Surface corrosion, however, typically deteriorates the performance…
The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO2) are still not well understood, despite the material's widespread application in material science, physics, geology, and biology. This study…
Small amounts of high-capacity silicon-based materials are already used in the anode of commercial Li-ion batteries, helping increase their energy density. Despite their remarkable storage capability, silicon continuously reacts with the…
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy…
We apply specular and off-specular neutron reflection at the hydrophobic silicon/water interface to check for evidence of nanoscopic air bubbles whose presence is claimed after an ad hoc procedure of solvent exchange. Nanobubbles and/or a…
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires…
Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were…