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We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states…

介观与纳米尺度物理 · 物理学 2012-05-24 Pierre Adroguer , David Carpentier , Jérôme Cayssol , Edmond Orignac

The topological insulator Bi2Se3 shows a Raman scattering response related to topologically protected surface states amplified by a resonant interband transition. Most significantly this signal has a characteristic Lorentzian lineshape and…

强关联电子 · 物理学 2015-05-30 V. Gnezdilov , Yu. G. Pashkevich , H. Berger , E. Pomjakushina , K. Conder , P. Lemmens

The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other…

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…

We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an…

介观与纳米尺度物理 · 物理学 2012-01-19 Hadar Steinberg , Jean-Baptiste Laloë , Valla Fatemi , Jagadeesh S. Moodera , Pablo Jarillo-Herrero

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the…

The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are…

Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…

介观与纳米尺度物理 · 物理学 2013-04-15 Tong Zhang , Niv Levy , Jeonghoon Ha , Young Kuk , Joseph A. Stroscio

To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…

介观与纳米尺度物理 · 物理学 2018-08-21 Abhishek Banerjee , R. Ganesan , P. S. Anil Kumar

Topological superconductivity is an exotic phase of matter in which the fully gapped superconducting bulk hosts gapless Majorana surface states protected by topology. Intercalation of copper, strontium or niobium between the quintuple…

We report on infrared (IR) optical experiments on Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$ epitaxial thin films. In the latter film, dilute Mn doping (4.5\%) of the topologically nontrivial semiconductor host results in…

材料科学 · 物理学 2015-06-19 B. C. Chapler , K. W. Post , A. R. Richardella , J. S. Lee , J. Tao , N. Samarth , D. N. Basov

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…

介观与纳米尺度物理 · 物理学 2016-07-04 Prosper Ngabonziza , Martin P. Stehno , Hiroaki Myoren , Viola A. Neumann , Gertjan Koster , Alexander Brinkman

The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract…

The electronic structure of Sb(110) is studied by angle-resolved photoemission spectroscopy and first-principle calculations, revealing several electronic surface states in the projected bulk band gaps around the Fermi energy. The…

The Cu-doped topological insulator Bi$_2$Se$_3$ has recently been found to undergo a superconducting transition upon cooling, raising the possibilities that it is the first known "topological superconductor" or realizes a novel non-Abelian…

超导电性 · 物理学 2009-12-18 L. Wray , S. Xu , J. Xiong , Y. Xia , D. Qian , H. Lin , A. Bansil , Y. Hor , R. J. Cava , M. Z. Hasan

Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…

介观与纳米尺度物理 · 物理学 2017-03-07 Yishuai Xu , Janet Chiu , Lin Miao , Haowei He , Zhanybek Alpichshev , A. Kapitulnik , Rudro R. Biswas , L. Andrew Wray

Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological…

材料科学 · 物理学 2015-05-20 Zhi Ren , A. A. Taskin , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

We have investigated the transport properties of topological insulator Bi2Se3 thin films grown using magnetron sputtering with an emphasis on understanding the behavior as a function of thickness. We show that thickness has a strong…

材料科学 · 物理学 2018-03-20 Yub Raj Sapkota , Dipanjan Mazumdar

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged…

介观与纳米尺度物理 · 物理学 2012-06-08 S. Adam , E. H. Hwang , S. Das Sarma

The binary Bi-chalchogenides, Bi2Ch3, are widely regarded as model examples of a recently discovered new form of quantum matter, the three-dimensional topological insulator (TI) [1-4]. These compounds host a single spin-helical surface…