Diffusion at the Surface of Topological Insulators
Abstract
We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states depend strongly on the amplitude of the hexagonal warping of their Fermi surface. It is shown that a perturbative analysis of the warping fails to describe the transport in experimentally available topological insulators, such as Bi2Se3 and Bi2Te3. Hence we develop a fully non-perturbative description of these effects. In particular, we find that the dependence of the warping amplitude on the Fermi energy manifests itself in a strong dependence of the diffusion constant on this Fermi energy, leading to several important experimental consequences. Moreover, the combination of a strong warping with an in plane Zeeman effect leads to an attenuation of conductance fluctuations in contrast to the situation of unwarped Dirac surface states.
Cite
@article{arxiv.1205.5209,
title = {Diffusion at the Surface of Topological Insulators},
author = {Pierre Adroguer and David Carpentier and Jérôme Cayssol and Edmond Orignac},
journal= {arXiv preprint arXiv:1205.5209},
year = {2012}
}
Comments
27 pages