We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three dimensional topological insulator, by introducing strong disorder in a layer of depth d extending inward from the surface of the topological insulator. The dependence on d of the density of states, conductance, scattering time, scattering length, diffusion constant, and mean Fermi velocity are investigated. The proposed control via disorder depth d requires that the disorder strength be near the large value which is necessary to drive the TI into the non-topological phase. If d is patterned using masks, gates, ion implantation, etc., then integrated circuits may be fabricated. This technique will be useful for experiments and for device engineering.
@article{arxiv.1410.7621,
title = {Modification and Control of Topological Insulator Surface States Using Surface Disorder},
author = {Vincent Sacksteder and Tomi Ohtsuki and Koji Kobayashi},
journal= {arXiv preprint arXiv:1410.7621},
year = {2015}
}