相关论文: Origin of giant bulk Rashba splitting: Application…
In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of…
It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…
The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…
We use polarization resolved Raman spectroscopy to demonstrate that for a 3D giant Rashba system the bulk plasmon collective mode can directly couple to the Raman response even in the long wavelength $\mathbf q \rightarrow 0$ limit.…
Composite quantum compounds (CQCs) have become an important avenue for the investigation of inter-correlation between two distinct phenomenon in physics. Topological superconductors, axion insulators etc. are few such CQCs which have…
BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and…
Recently large Rashba-like spin splitting has been observed in certain bulk ferroelectrics. In contrast with the relativistic Rashba effect, the chiral spin texture and large spin-splitting of the electronic bands depend strongly on the…
The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a…
3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D…
Spin-orbit splitting of surface states is analyzed within and beyond the Rashba model using as examples the (111) surfaces of noble metals, Ag2Bi surface alloy, and topological insulator Bi2Se3. The ab initio analysis of relativistic…
The spin-orbit -induced spin splitting of energy bands in low symmetry compounds (the Rashba Effect) has a long-standing relevance to spintronic applications and to the fundamental understanding of symmetry breaking in solids, yet the…
Spin splittings in III-V materials and heterostructures are of interest because of potential applications, mainly in spintronic devices. A necessary condition for the existence of these spin splittings is the absence of inversion symmetry.…
We study the magneto-optical (MO) response of polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being non-magnetic, the material is found to yield a huge MO activity in the infrared region…
Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic…
BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $\beta-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of…
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries…
Rashba spin splitting in two-dimensional (2D) semiconductor systems is generally calculated in a ${\bf k} \cdot {\bf p}$ Luttinger-Kohn approach where the spin splitting due to asymmetry emerges naturally from the bulk band structure. In…