相关论文: Graphene transistors are insensitive to pH changes…

Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without…

Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite…

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective…

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions…

The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…

Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a…

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon…

We introduce a new method for hardware non-uniform random number generation based on the transfer characteristics of graphene field-effect transistors (GFETs) which requires as few as two transistors and a resistor (or transimpedance…

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

Graphene has the great potential to be used for humidity sensing due to ultrahigh surface area and conductivity. However, the impact of different atomic layers of graphene on SiO2/Si substrate on the humidity sensing have not been studied…

We report that the $\pi$ band of graphene sensitively changes as a function of an external potential induced by Na especially when the potential becomes periodic at low temperature. We have measured the band structures from the graphene…

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…

Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently,…

We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin…

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A…

This paper presents an electrolytically gated broadband microwave sensor where atomically-thin graphene layers are integrated into coplanar waveguides and coupled with microfluidic channels. The interaction between a solution under test and…

We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the…

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…