相关论文: Reconciling results of tunnelling experiments on (…

We comment on the recent paper "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in the d2I/dV2-V characteristics in our studies on the…

Recent experiments on resonant tunneling structures comprising (Ga,Mn)As quantum wells [Ohya et al., Nature Physics 7, 342 (2011)] have evoked a strong debate regarding their interpretation as resonant tunneling features and the near…

We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…

We present results on the direct spatial mapping of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature…

We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are…

We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same…

Recently there has been reinvigorated interest in the superconducting proximity effect, driven by predictions of the emergence of Majorana fermions. To help guide this search, we have developed a phenomenological model for the tunneling…

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…

We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a…

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…

The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE.…

A model of coherent tunneling, which combines multi-orbital tight-binding approximation with Landauer-B\"uttiker formalism, is developed and applied to all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A…

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…

The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel…

The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually…

We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic…

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy…

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…

We propose a simple, general, and accurate formula for analyzing the tunneling between classical configurations of a non-planar molecule in a gas medium, as a function of the thermodynamic parameters of the gas. We apply it to two…