相关论文: Vertical current induced domain wall motion in MgO…
Discovering alternative ways to drive domain wall (DW) dynamics is crucial for advancing spintronic applications. Here we demonstrate via atomistic spin dynamics simulations that optical torques can efficiently drive 90^{\circ} DWs in the…
Surface Acoustic Waves (SAW) have been used in spintronic applications to decrease the magnetic field or the electric current required to act on the magnetization. A common belief is that a SAW alone cannot achieve a directed magnetic…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
Current-driven domain wall (DW) motion in magnetic wires with asymmetric notches was investigated by means of magnetic force microscopy. It was found that the critical current density necessary for the current-driven DW motion depended on…
Memory and logic devices that encode information in magnetic domains rely on the controlled injection of domain walls to reach their full potential. In this work, we exploit the chiral coupling induced by the Dzyaloshinskii-Moriya…
Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working current is under tight demand. Here, we report a unique…
We investigate the domain wall dynamics of a ferromagnetic wire under the combined influence of a spin-polarized current and magnonic spin-transfer torque generated by an external field, taking also into account Rashba spin-orbit coupling…
Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced DW motion exhibits lower dissipation. On the other hand,…
We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical Kerr Effect Microscopy and micromagnetic simulation.…
Understanding the domain wall (DW) dynamics in magnetic nanowires (NW) is crucial for spintronic-based applications demanding the use of DWs as information carriers. This work focuses on the dynamics of a DW displacing along a bent NW with…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a…
Spintronics is concerned with replacing charge current with current of spin, the electron's intrinsic angular momentum. In magnetic insulators, spin currents are carried by magnons, the quanta of spin-wave excitations on top of the…
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
The interaction between the propagating spin waves and the current driven motion of a transverse domain wall in magnetic nanowires is studied by micromagnetic simulations. If the speed of domain walls due to current induced spin transfer…
The coupling between a current and a Bloch wall is examined in the half-metal limit of the double exchange model. The conduction electrons transfer angular momentum to the Bloch wall with 100% efficiency in the absence of pinning. The wall…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current is shown to have two effects; one is momentum transfer, which is proportional to the charge current and wall…