相关论文: Vertical current induced domain wall motion in MgO…
We demonstrate from both simulation and experiment a simple scheme for selective injection of multiple domain walls in a magnetic nanowire. The structure consists of a side-contact misaligned Hall bar made of ferromagnet/heavy metal…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably,…
We study in detail the classical and quantum depinning of a domain wall (DW) induced by a fast-varying spin-polarized current. By confirming the adiabatic condition for calculating the spin-torque in fast-varying current case, we show that…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
Current-induced spin torque and magnetization dynamics in the presence of spin diffusion in magnetic textures is studied theoretically. We uncover an additional torque on the form \sim{\bm\nabla}^2[{\bf M}x({\bf u}\cdot{\bm \nabla}){\bf…
We present a model for current-driven motion of a magnetic domain-wall line, in which the dynamics of the domain wall is equivalent to that of an overdamped vortex line in an anisotropic pinning potential. This potential has both extrinsic…
Theoretically, we study the dynamics of a current induced domain wall in the bi-layer structure consists of a ferromagnetic layer and a non-magnetic metal layer with strong spin-orbit coupling in the presence of spin-Hall effect. The…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
We propose a method that allows power conversion from DC magnetic fields to AC electric voltages using domain wall (DW) motion in ferromagnetic nanowires. The device concept relies on spinmotive force, voltage generation due to…
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is…
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and…
Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy (PMA). A stepped nanowire is proposed to pin DW and achieve high information storage capacity…
Since its proposal, the idea to vastly increase data storage density with a magnetic non-volatile 3D shift-register has sustained interest in current-induced domain wall (DW) motion. So far, experimental efforts have focused on flat…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
We theoretically study the current-driven domain wall motion in the presence of both the spin Hall effect and an extrinsic pinning potential. The spin Hall effect mainly affects the damping ratio of the domain wall precession in the pinning…
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection.…