相关论文: Vertical current induced domain wall motion in MgO…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
We study the domain wall motion in a disordered weak ferromagnet, induced by injecting a spin current from a strong ferromagnet. Starting from the spin diffusion equation describing the spin accumulation in the weak ferromagnet, we…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…
Magnetic textures can be manipulated by electric currents via the mechanisms of spin-transfer and spin-orbit-torques. We review how these torques can be exploited to create chiral magnetic textures in magnets with broken inversion…
The recent experimental demonstration of spin-polarized supercurrents offer a venue for establishment of a superconducting analogue to conventional spintronics. Whereas domain wall motion in purely magnetic structures is a well-studied…
In this work, we have investigated the domain wall (DW) depinning behavior in the notched nanowire by a micromagnetic simulation. A transverse domain wall (TW) was initially positioned at the center of notch and 1 ns length current pulse…
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in…
Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for…
Many future concepts for spintronic devices are based on the current-driven motion of magnetic domain walls through nanowires. Consequently a thorough understanding of the domain wall mobility is required. However, the magnitude of the…
We study current-induced dynamics of a magnetic domain wall by solving a time-dependent Schr\"{o}dinger equation combined with Landau-Lifshitz-Gilbert equation in a one-dimensional electron system coupled to localized spins. Two types of…
In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to…
Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating…
Efficient magnetic switching is a cornerstone for advancing spintronics, particularly for energy-efficient data storage and memory devices. Here, we report the electrical switching of spin-flips in V-doped WSe2 multilayers, a van der Waals…
We report on a theoretical study of the spin-current excited dynamics of domain walls (DWs) in ferrimagnets in the vicinity of the angular momentum compensation point. Effective Lagrangian and nonlinear dynamic equations are derived for a…
The influence of gate voltage, temperature and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The…
Accurate quantification of the spin-orbit torques (SOTs) is critical for the identification and applications of new spin-orbitronic effects. One of the most popular techniques to qualify the SOTs is the switching angle shift, where the…
We studied the current-induced magnetization dynamics of a domain wall confined in a magnetic wire with bi-axial anisotropy. We showed that above the threshold current density, breathing-mode excitation, where the thickness of the domain…
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of…
The domain wall motion in a magnetic nanowire is examined theoretically in the regime where the domain wall driving force is weak and its competition against disorders is assisted by thermal agitations. Two types of driving forces are…
The current-driven domain wall motion along two exchange-coupled ferromagnetic layers with perpendicular anisotropy is studied by means of micromagnetic simulations and compared to the conventional case of a single ferromagnetic layer. Our…