相关论文: Vertical current induced domain wall motion in MgO…

The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW…

In cavity quantum electrodynamics, the multiple reflections of a photon between two mirrors defining a cavity is exploited to enhance the light-coupling of an intra-cavity atom. We show that this paradigm for enhancing the interaction of a…

The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…

The magnetization dynamics equation predicts that a domain wall that changes structure should undergo a displacement by itself - automotion - due to the relaxation of the linear momentum that is associated with the wall structure. We…

We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall…

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…

We study the charge and spin currents passing through a magnetic tunnel junction (MTJ) on the basis of a tight-binding model. The currents are evaluated perturbatively with respect to the tunnel Hamiltonian. The charge current has the form…

We report first principle numerical study of domain wall (DW) depinning in two-dimensional magnetic film, which is modeled by 2D random-field Ising system with the dipole-dipole interaction. We observe nonconventional activation-type motion…

We explore universal behaviors of magnetic domain wall driven by the spin-transfer of an electrical current, in a ferromagnetic (Ga,Mn)(As,P) thin film with perpendicular magnetic anisotropy. For a current direction transverse to domain…

Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be…

Most of the existing researches on the dynamics of a domain wall (DW) have focused on the effect of DC biases, where the induced velocity is determined by the bias strength. Here we show that AC biases such as a field or a current are also…

We report the rectifying effect of a constant-wave radio frequency (RF) current by a magnetic domain wall (DW) on a single-layered ferromagnetic wire. A direct-current (DC) voltage is generated by the spin torque diode effect, which is a…

The issue of whether a thermal gradient acts like a magnetic field or an electric current in the domain wall (DW) dynamics is investigated. Broadly speaking, magnetization control knobs can be classified as energy-driving or…

We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange…

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…

We investigate the dynamics of ferroelectric textures driven by polarization currents. We show that, ferrons, the quanta of collective polarization excitations, provide an exotic driving mechanism for domain wall (DW) dynamics, compared…

We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching…

Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved…

We show that, in a magnetic field parallel to the 2D electron layer, strong electron correlations change the rate of tunneling from the layer exponentially. It results in a specific density dependence of the escape rate. The mechanism is a…

Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…