相关论文: Vertical current induced domain wall motion in MgO…
We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents,…
The current-driven motion of magnetic domain walls (DWs) is the working principle of magnetic racetrack memories. In this type of spintronic technology, high current densities are used to propel DW motion in magnetic nanowires, causing…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain…
We consider the spin torque induced by a current flowing ballistically through a magnetic domain wall. In addition to a global pressure in the direction of the electronic flow, the torque has an internal structure of comparable magnitude…
Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array were driven…
In order to explain recent experiments reporting a motion of magnetic domain walls (DW) in nanowires carrying a current, we propose a modification of the spin transfer torque term in the Landau-Lifchitz-Gilbert equation. We show that it…
Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction…
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of…
Spin polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomena leads to alluring possibilities for the achievement of a…
The current-driven motion of a domain wall (DW) in a ferromagnet with many Bloch lines (BLs) via the spin transfer torque is studied theoretically. It is found that the motion of BLs changes the current-velocity ($j$-$v$) characteristic…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
Adiabatic spin transfer torque induced domain wall (DW) depinning from a notch and DW propagation in a nanowire with a series of notches is investigated. Surprisingly, notches help a current to depin a DW and make a DW easier to propagate…
We show that an applied charge current in a magnetic nanowire containing domain walls (DWs) results in an interaction between DWs mediated by spin-dependent interferences of the scattered carriers. The energy and torque associated with this…
Current-driven domain wall (DW) motion is investigated in Pt/Co/GdOx nanostrips with perpendicular magnetic anisotropy. Measurements of the propagation field and the energy barrier for thermally activated DW motion reveal a large…
We propose an effect whereby an electric current along the interface between a ferromagnetic and normal metal leads to injection of pure spin current into the normal metal, if the magnetization-direction in the ferromagnet varies along the…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
The dynamics of metastable magnetic domain walls in straight ferromagnetic nanowires under spin waves, external magnetic fields, and current induced spin transfer torque are studied by micromagnetic simulations. It is found that in contrast…