相关论文: Snake States in Graphene p-n Junctions

We propose an optical analogue of electron snake states based on artificial gauge magnetic field in photonic graphene with effective strain implemented by varying distance between pillars. We develop an intuitive and exhaustive continuous…

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the…

Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band…

In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…

We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering…

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…

In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into…

Ballistic transport in graphene p-n junctions in the presence of magnetic field exhibits two distinct regimes: At low fields, transport is partially suppressed by the field. When the field exceeds a certain critical value, the junction is…

Strain has been extensively employed to tailor graphene's properties and has emerged as a powerful tool for engineering gauge fields and exploring fundamental phenomena in artificial platforms like photonic graphene. Here we discover that,…

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the…

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…

We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates…

We propose a Corbino-disk geometry of a graphene membrane under out-of-plane strain deformations as a convenient path to detect pseudo-magnetic and electric fields via electronic transport. The three-fold symmetric pseudo-magnetic field…

Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…

The coupling of geometrical and electronic properties is a promising venue to engineer conduction properties in graphene. Confinement added to strain allows for interplay of different transport mechanisms with potential device applications.…

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. This framework is known to experimentally exhibit conductance plateaus whose origin is still not fully understood.…

The influence of magnetic impurities on the transport properties of graphene is investigated in the regime of strong applied electric fields. As a result of electron-hole pair creation, the response becomes nonlinear and dependent on the…

Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…